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PDF EID8596A1-12 Data sheet ( Hoja de datos )

Número de pieza EID8596A1-12
Descripción 8.50-9.60 GHz 12-Watt Internally-Matched Power FET
Fabricantes Excelics Semiconductor 
Logotipo Excelics Semiconductor Logotipo



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No Preview Available ! EID8596A1-12 Hoja de datos, Descripción, Manual

www.DataSheet4U.com
UPDATED 07/12/2007
EID8596A1-12
8.50 – 9.60 GHz 12-Watt Internally-Matched Power FET
FEATURES
8.50 – 9.60 GHz Bandwidth
Input/Output Impedance Matched to 50 Ohms
+41.5 dBm Output Power at 1dB Compression
9.0 dB Power Gain at 1dB Compression
35% Power Added Efficiency
Hermetic Metal Flange Package
100% Tested for DC, RF, and RTH
DESCRIPTION
The EID8596A1-12 is a high power, highly linear,
single stage MFET amplifier in a flange mount
package. This amplifier features Excelics’ unique
PHEMT transistor technology.
Caution! ESD sensitive device.
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
SYMBOL
P1dB
G1dB
G
PAE
PARAMETERS/TEST CONDITIONS1
Output Power at 1dB Compression f = 8.50-9.60GHz
VDS = 10 V, IDSQ 3600mA
Gain at 1dB Compression
f = 8.50-9.60GHz
VDS = 10 V, IDSQ 3600mA
Gain Flatness
f = 8.50-9.60GHz
VDS = 10 V, IDSQ 3600mA
Power Added Efficiency at 1dB Compression
VDS = 10 V, IDSQ 3600mA
f = 8.50-9.60GHz
Id1dB
Drain Current at 1dB Compression f = 8.50-9.60GHz
IDSS Saturated Drain Current
VDS = 3 V, VGS = 0 V
VP Pinch-off Voltage
VDS = 3 V, IDS = 60 mA
RTH Thermal Resistance2
MIN
40.5
8.0
TYP
41.5
9.0
35
4000
6500
-1.2
2.5
MAX
±0.6
4600
7500
-2.5
3.0
UNITS
dBm
dB
dB
%
mA
mA
V
oC/W
Notes:
1. Tested with 50 Ohm gate resistor.
2. Overall Rth depends on case mounting.
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 1 of 4
Revised July 2007

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