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Número de pieza | EID1415A1-8 | |
Descripción | 14.40-15.35 GHz 8-Watt Internally-Matched Power FET | |
Fabricantes | Excelics Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de EID1415A1-8 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
No Preview Available ! UPDATED 11/12/2007
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EID1415A1-8
14.40-15.35GHz 8-Watt Internally-Matched Power FET
FEATURES
• 14.40-15.35GHz Bandwidth
• Input/Output Impedance Matched to 50 Ohms
• +39.5 dBm Output Power at 1dB Compression
• 6.5 dB Power Gain at 1dB Compression
• 27% Power Added Efficiency
• 100% Tested for DC, RF, and RTH
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Caution! ESD sensitive device.
SYMBOL
PARAMETERS/TEST CONDITIONS1
P1dB
G1dB
∆G
PAE
Id1dB
Output Power at 1dB Compression f =14.40-15.35GHz
VDS = 10 V, IDSQ ≈ 2200mA
Gain at 1dB Compression
f =14.40-15.35GHz
VDS = 10 V, IDSQ ≈ 2200mA
Gain Flatness
f =14.40-15.35GHz
VDS = 10 V, IDSQ ≈ 2200mA
Power Added Efficiency at 1dB Compression
VDS = 10 V, IDSQ ≈ 2200mA
f =14.40-15.35GHz
Drain Current at 1dB Compression f =14.40-15.35GHz
IDSS Saturated Drain Current
VDS = 3 V, VGS = 0 V
VP Pinch-off Voltage
RTH Thermal Resistance3
Note: 1. Tested with 100 Ohm gate resistor.
2. S.C.L. = Single Carrier Level.
3. Overall Rth depends on case mounting.
VDS = 3 V, IDS = 40 mA
MIN TYP MAX UNITS
38.5 39.5
dBm
5.5 6.5
dB
±0.6
dB
27
2800
4200
-1.2
3.5
3600
5760
-2.5
4.0
%
mA
mA
V
oC/W
ABSOLUTE MAXIMUM RATING FOR EFE
SYMBOLS
PARAMETERS
ABSOLUTE1
Vds Drain-Source Voltage
15V
Vgs Gate-Source Voltage
-5V
Igf Forward Gate Current 96.0mA
Igr Reverse Gate Current -19.2mA
Pin Input Power 38.5dBm
Tch Channel Temperature
175C
Tstg
Storage Temperature
-65C to +175C
Pt Total Power Dissipation 37.5W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
CONTINUOUS2
10V
-4V
28.8mA
-4.8mA
@ 3dB Compression
175C
-65C to +175C
37.5W
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 1 of 4
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
Revised November 2007
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet EID1415A1-8.PDF ] |
Número de pieza | Descripción | Fabricantes |
EID1415A1-12 | 14.40-15.35 GHz 12-Watt Internally-Matched Power FET | Excelics Semiconductor |
EID1415A1-5 | 14.40-15.35 GHz 5-Watt Internally-Matched Power FET | Excelics Semiconductor |
EID1415A1-8 | 14.40-15.35 GHz 8-Watt Internally-Matched Power FET | Excelics Semiconductor |
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