|
|
Número de pieza | EID0910A1-12 | |
Descripción | 9.50-10.50 GHz 12-Watt Internally Matched Power FET | |
Fabricantes | Excelics Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de EID0910A1-12 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
No Preview Available ! UPDATED 07/12/2007
www.DataSheet4U.com
EID0910A1-12
9.50-10.50 GHz 12-Watt Internally Matched Power FET
FEATURES
• 9.50– 10.50GHz Bandwidth
• Input/Output Impedance Matched to 50 Ohms
• +41 dBm Output Power at 1dB Compression
• 8.0 dB Power Gain at 1dB Compression
• 28% Power Added Efficiency
• Hermetic Metal Flange Package
• 100% Tested for DC, RF, and RTH
.827±.010 .669
Excelics
EID0910A1-12
.120 MIN YYWW
SN
.024
.421
.120 MIN
.168±.010
.125
.508±.008
.442
ALL DIMENSIONS IN INCHES
.004
.063
.004
.105±.008
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
SYMBOL
P1dB
G1dB
∆G
PAE
Id1dB
PARAMETERS/TEST CONDITIONS1
Output Power at 1dB Compression
f = 9.50-10.50GHz
VDS = 10 V, IDSQ ≈ 3200mA
Gain at 1dB Compression
f = 9.50-10.50GHz
VDS = 10 V, IDSQ ≈ 3200mA
Gain Flatness
f = 9.50-10.50GHz
VDS = 10 V, IDSQ ≈ 3200mA
Power Added Efficiency at 1dB Compression
VDS = 10 V, IDSQ ≈ 3200mA
f = 9.50-10.50GHz
Drain Current at 1dB Compression
f = 9.50-10.50GHz
IDSS
Saturated Drain Current
VDS = 3 V, VGS = 0 V
VP Pinch-off Voltage
RTH Thermal Resistance2
Notes:
1. Tested with 50 Ohm gate resistor.
2. Overall Rth depends on case mounting.
VDS = 3 V, IDS = 64 mA
ABSOLUTE MAXIMUM RATING1,2
SYMBOL
CHARACTERISTIC
VDS Drain to Source Voltage
VGS Gate to Source Voltage
IDS Drain Current
IGSF Forward Gate Current
PIN Input Power
PT Total Power Dissipation
TCH Channel Temperature
TSTG
Storage Temperature
Notes: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Caution! ESD sensitive device.
MIN
40
7.0
TYP
41
8.0
28
3800
6400
-1.2
2.5
MAX
±0.6
4300
8000
-2.5
3.0
UNITS
dBm
dB
dB
%
mA
mA
V
oC/W
VALUE
10 V
-3.0 V
IDSS
220 mA
@ 3dB compression
50 W
175°C
-65/+175°C
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 1 of 2
Revised July 2007
1 page |
Páginas | Total 2 Páginas | |
PDF Descargar | [ Datasheet EID0910A1-12.PDF ] |
Número de pieza | Descripción | Fabricantes |
EID0910A1-12 | 9.50-10.50 GHz 12-Watt Internally Matched Power FET | Excelics Semiconductor |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |