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PDF 28F800C3 Data sheet ( Hoja de datos )

Número de pieza 28F800C3
Descripción 3 Volt Advanced+ Boot Block Flash Memory
Fabricantes Intel Corporation 
Logotipo Intel Corporation Logotipo



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No Preview Available ! 28F800C3 Hoja de datos, Descripción, Manual

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Intel£ Advanced+ Boot Block Flash
Memory (C3)
28F800C3, 28F160C3, 28F320C3, 28F640C3 (x16)
Datasheet
Product Features
Flexible SmartVoltage Technology
— 2.7 V– 3.6 V Read/Program/Erase
— 12 V for Fast Production Programming
1.65 V–2.5 V or 2.7 V–3.6 V I/O Option
— Reduces Overall System Power
High Performance
— 2.7 V– 3.6 V: 70 ns Max Access Time
Optimized Architecture for Code Plus
Data Storage
— Eight 4 Kword Blocks, Top or Bottom
Parameter Boot
— Up to One Hundred-Twenty-Seven 32
Kword Blocks
— Fast Program Suspend Capability
— Fast Erase Suspend Capability
Flexible Block Locking
— Lock/Unlock Any Block
— Full Protection on Power-Up
— WP# Pin for Hardware Block Protection
Low Power Consumption
— 9 mA Typical Read
— 7 A Typical Standby with Automatic
Power Savings Feature (APS)
Extended Temperature Operation
— –40 °C to +85 °C
128-bit Protection Register
— 64 bit Unique Device Identifier
— 64 bit User Programmable OTP Cells
Extended Cycling Capability
— Minimum 100,000 Block Erase Cycles
Software
— Intel® Flash Data Integrator (FDI)
— Supports Top or Bottom Boot Storage,
Streaming Data (e.g., voice)
— Intel Basic Command Set
— Common Flash Interface (CFI)
Standard Surface Mount Packaging
— 48-Ball µBGA*/VFBGA
— 64-Ball Easy BGA Packages
— 48-Lead TSOP Package
ETOX™ VIII (0.13 µm) Flash
Technology
— 16, 32 Mbit
ETOX™ VII (0.18 µm) Flash Technology
— 16, 32, 64 Mbit
ETOX™ VI (0.25 µm) Flash Technology
— 8, 16 and 32 Mbit
The Intel® Advanced+ Book Block Flash Memory (C3) device, manufactured on Intel’s latest
0.13 µm and 0.18 µm technologies, represents a feature-rich solution for low-power applications.
The C3 device incorporates low-voltage capability (3 V read, program, and erase) with high-
speed, low-power operation. Flexible block locking allows any block to be independently locked
or unlocked. Add to this the Intel® Flash Data Integrator (FDI) software and you have a cost-
effective, flexible, monolithic code plus data storage solution. Intel® Advanced+ Boot Block Flash
Memory (C3) products will be available in 48-lead TSOP, 48-ball CSP, and 64-ball Easy BGA
packages. Additional information on this product family can be obtained by accessing the Intel®
Flash website: http://www.intel.com/design/flash.
Notice: This specification is subject to change without notice. Verify with your local Intel sales
office that you have the latest datasheet before finalizing a design.
Order Number: 290645-016
May 2003

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28F800C3 pdf
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Contents
Revision History
Date of
Revision
05/12/98
07/21/98
10/03/98
12/04/98
12/31/98
02/24/99
06/10/99
03/20/00
04/24/00
10/12/00
7/20/01
10/02/01
Version
-001
-002
-003
-004
-005
-006
-007
-008
-009
-010
-011
-012
Description
Original version
48-Lead TSOP package diagram change
µBGA package diagrams change
32-Mbit ordering information change (Section 6)
CFI Query Structure Output Table Change (Table C2)
CFI Primary-Vendor Specific Extended Query Table Change for Optional
Features and Command Support change (Table C8)
Protection Register Address Change
IPPD test conditions clarification (Section 4.3)
µBGA package top side mark information clarification (Section 6)
Byte-Wide Protection Register Address change
VIH Specification change (Section 4.3)
VIL Maximum Specification change (Section 4.3)
ICCS test conditions clarification (Section 4.3)
Added Command Sequence Error Note (Table 7)
Datasheet renamed from 3 Volt Advanced Boot Block, 8-, 16-, 32-Mbit Flash
Memory Family.
Added tBHWH/tBHEH and tQVBL (Section 4.6)
Programming the Protection Register clarification (Section 3.4.2)
Removed all references to x8 configurations
Removed reference to 40-Lead TSOP from front page
Added Easy BGA package (Section 1.2)
Removed 1.8 V I/O references
Locking Operations Flowchart changed (Appendix B)
Added tWHGL (Section 4.6)
CFI Primary Vendor-Specific Extended Query changed (Appendix C)
Max ICCD changed to 25 µA
Table 10, added note indicating VCCMax = 3.3 V for 32-Mbit device
Added specifications for 0.18 micron product offerings throughout document
Added 64-Mbit density
Changed references of 32Mbit 80ns devices to 70ns devices to reflect the
faster product offering.
Changed VccMax=3.3V reference to indicate that the affected product is the
0.25µm 32Mbit device.
Minor text edits throughout document.
Added 1.8v I/O operation documentation where applicable
Added TSOP PCN ‘Pin-1’ indicator information
Changed references in 8 x 8 BGA pinout diagrams from ‘GND’ to ‘Vssq’
Added ‘Vssq’ to Pin Descriptions Information
Removed 0.4 µm references in DC characteristics table
Corrected 64Mb package Ordering Information from 48-uBGA to 48-VFBGA
Corrected ‘bottom’ parameter block sizes to on 8Mb device to 8 x 4KWords
Minor text edits throughout document
Added specifications for 0.13 micron product offerings throughout document
Datasheet
5

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28F800C3 arduino
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Intel£ Advanced+ Boot Block Flash Memory (C3)
Figure 3. 48-Ball µBGA* and 48-Ball Very Fine Pitch BGA (VF BGA) Chip Size Package
(Top View, Ball Down)1,2,3
1234567
16M
A A13 A11 A8 VPP WP# A19 A7
8
A4
B A14 A10 WE# RP# A18 A17
C A15 A12
64M 32M
A9 A21 A20
A6
A5
A3
A2
A1
D A16 D14 D5 D11 D2
D8 CE# A0
E VCCQ D15 D6 D12 D3 D9 D0 GND
F GND
D7
D13
D4
VCC D10
D1
OE#
NOTES:
1. Shaded connections indicate the upgrade address connections. Routing is not recommended in this area.
2. A19 denotes 16 Mbit; A20 denotes 32 Mbit; A21 denotes 64 Mbit.
3. Unused address balls are not populated.
Datasheet
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