|
|
PDF FSFA2100 Data sheet ( Hoja de datos )
| Número de pieza | FSFA2100 | |
| Descripción | Fairchild Power Switch (FPS) for Half-Bridge PWM Converters | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de FSFA2100 (archivo pdf) en la parte inferior de esta página. Total 16 Páginas | ||
|
No Preview Available !
www.DataSheet4U.com
September 2008
FSFA2100 — Fairchild Power Switch (FPS™)
for Half-Bridge PWM Converters
Features
Optimized for Complementary Driven Half-Bridge
Soft-Switching Converters
Can be Applied to Various Topologies: Asymmetric
PWM Half-Bridge Converters, Asymmetric PWM
Flyback Converters, Asymmetric PWM Forward
Converters, Active Clamp Flyback Converters
High Efficiency through Zero-Voltage-Switching (ZVS)
Internal SuperFET™s with Fast-Recovery Type
Body Diode (trr=120ns)
Fixed Dead Time (200ns) Optimized for MOSFETs
Up to 300kHz Operating Frequency
Internal Soft-Start
Pulse-by-Pulse Current Limit
Burst-Mode Operation for Low Standby Power
Consumption
Protection Functions: Over-Voltage Protection
(OVP), Over-Load Protection (OLP), Abnormal
Over-Current Protection (AOCP), Internal Thermal
Shutdown (TSD)
Applications
PDP and LCD TVs
Desktop PCs and Servers
Adapters
Telecom Power Supplies
Description
The growing demand for higher power density and low
profile in power converter designs has forced designers
to increase switching frequencies. Operation at higher
frequencies considerably reduces the size of passive
components, such as transformers and filters. However,
switching losses have been an obstacle to high-
frequency operation. To reduce switching losses and
allow high-frequency operation, Pulse Width Modulation
(PWM) with soft-switching techniques have been
developed. These techniques allow switching devices to
be softly commutated, which dramatically reduces the
switching losses and noise.
FSFA2100 is an integrated PWM controller and
SuperFET™ specifically designed for Zero-Voltage-
Switching (ZVS) half-bridge converters with minimal
external components. The internal controller includes an
oscillator, under-voltage-lockout, leading-edge blanking
(LEB), optimized high-side and low-side gate driver,
internal soft-start, temperature-compensated precise
current sources for loop compensation and self-
protection circuitry. Compared with discrete MOSFET
and PWM controller solution, FSFA2100 can reduce total
cost; component count, size, and weight; while
simultaneously increasing efficiency, productivity, and
system reliability.
Ordering Information
Part
Number
Operating
Junction RDS(ON_MAX)
Temperature
FSFA2100 -40 to +130°C 0.38Ω
Maximum Output
Power without
Heatsink
(VIN=350~400V)(1,2)
200W
Maximum Output
Power with Heatsink
(VIN=350~400V)(1,2)
450W
Notes:
1. The junction temperature can limit the maximum output power.
2. Maximum practical continuous power in an open-frame design at 50°C ambient.
Package
9-SIP
Eco
Status
RoHS
For Fairchild’s definition of “green” Eco Status, please visit: http://www.fairchildsemi.com/company/green/rohs_green.html.
© 2008 Fairchild Semiconductor Corporation
FSFA2100 • Rev. 1.0.0
www.fairchildsemi.com
1 page  
www.DataSheet4U.com
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In
addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only. TA=25°C unless otherwise specified.
Symbol
Parameter
VDS
LVCC
HVCC to VCTR
Maximum Drain-to-Source Voltage (VDL-VCTR and VCTR-PG)
Low-Side Supply Voltage
High-Side VCC Pin to Low-Side Drain Voltage
HVCC
High-Side Floating Supply Voltage
VFB
VCS
VRT
dVCTR/dt
PD
TJ
Feedback Pin Input Voltage
Current Sense (CS) Pin Input Voltage
RT Pin Input Voltage
Allowable Low-Side MOSFET Drain Voltage Slew Rate
Total Power Dissipation(3)
Maximum Junction Temperature(4)
Recommended Operating Junction Temperature(4)
TSTG
Storage Temperature Range
Min.
600
-0.3
-0.3
-0.3
-0.3
-5.0
-0.3
-40
-55
Max.
25.0
25.0
625.0
LVCC
1.0
5.0
50
12.0
+150
+130
+150
Unit
V
V
V
V
V
V
V
V/ns
W
°C
°C
MOSFET Section
VDGR
Drain Gate Voltage (RGS=1MΩ)
VGS Gate Source (GND) Voltage
IDM Drain Current Pulsed
ID Continuous Drain Current
600
±30
33
TC=25°C
11
TC=100°C
7
V
V
A
A
Package Section
Torque Recommended Screw Torque
5~7 kgf·cm
Notes:
3. Per MOSFET when both MOSFETs are conducting.
4. The maximum value of the recommended operating junction temperature is limited by thermal shutdown.
Thermal Impedance
TA=25°C unless otherwise specified.
Symbol
Parameter
θJC Junction-to-Case Center Thermal Impedance (Both MOSFETs Conducting)
Value
10.44
Unit
ºC/W
© 2008 Fairchild Semiconductor Corporation
FSFA2100 • Rev. 1.0.0
5
www.fairchildsemi.com
5 Page 
Figure 21. Half-Wave Sensing
www.DataSheet4U.com
through the MOSFET is limited; and, therefore, the
maximum input power is restricted with a given input
voltage. If the output consumes more than this maximum
power, the output voltage (VO) decreases below the
nominal voltage. This reduces the current through the
opto-coupler diode, which also reduces the opto-coupler
transistor current, increasing the feedback voltage (VFB).
If VFB exceeds 3V, D1, which is illustrated in Figure 19, is
blocked and the OLP current source starts to charge CB
slowly, as shown in Figure 23. In this condition, VFB
continues increasing until it reaches 7V, then the
switching operation is terminated, as shown in Figure 23.
The delay time for shutdown is the time required to
charge CB from 3V to 7V with 5µA, as given by:
t delay
= (7V
- 3V ) × CB
5μA
(2)
A 30 ~ 50ms delay time is typical for most applications.
VO
7V Overload protection
VFB
3V Vc
Figure 22. Full-Wave Sensing
Ids t1
tdelay
t2 t
ILIM
3.1 Pulse-by-Pulse Current Limit: In normal operation,
the duty cycle of the low-side MOSFET is determined by
comparing the internal triangular signal with the
feedback voltage. However, the low-side MOSFET is
forced to turn off when the current sense pin voltage
reaches -0.58V. This operation limits the drain current
below a pre-determined level to avoid the destruction of
the MOSFETs.
3.2 Abnormal Over-Current Protection (AOCP): If one
of the secondary rectifier diodes is short-circuited, large
current with extremely high di/dt can flow through the
MOSFET before OCP or OLP is triggered. AOCP is
triggered with a very short shutdown delay time when the
sensed voltage drops below -0.9V. This protection is
latch mode and reset only when LVCC is pulled below 5V.
3.3 Overload Protection (OLP): Overload is defined as
the load current exceeding its nominal level due to an
unexpected abnormal event. In this situation, a
protection circuit should trigger to protect the power
supply. However, even when the power supply is in the
normal condition, the OLP circuit can be triggered during
the load transition. To avoid this undesired operation, the
OLP circuit is designed to trigger only after a specified
time to determine whether it is a transient situation or a
true overload situation. Because of the pulse-by-pulse
current limit capability, the maximum peak current
Figure 23. Overload Protection
3.4 Over-Voltage Protection (OVP): When the LVCC
reaches 23V, OVP is triggered. This protection is
enabled when using an auxiliary winding of the
transformer to supply LVCC to FPS.
3.5 Thermal Shutdown (TSD): The MOSFETs and the
control IC are built in one package. This allows the
control IC to detect the abnormal over-temperature of the
MOSFET. If the temperature exceeds approximately
130°C, the thermal shutdown triggers.
4. Soft-Start: At startup, the duty cycle starts increasing
slowly to establish the correct working conditions for
transformers, inductors, and capacitors. The voltage on
the output capacitors is progressively increased to
smoothly establish the required output voltage. Soft-start
time is internally implemented for 15ms (when the
operating frequency is set to 100kHz.) In addition, to
help the soft-start operation, a capacitor and a resistor
would be connected on the RT pin externally, as shown
in Figure 24. Before the power supply is powered on, the
capacitor CSS remains fully discharged. After power-on,
CSS becomes charged progressively by the current
© 2008 Fairchild Semiconductor Corporation
FSFA2100 • Rev. 1.0.0
11
www.fairchildsemi.com
11 Page | ||
| Páginas | Total 16 Páginas | |
| PDF Descargar | [ Datasheet FSFA2100.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| FSFA2100 | Fairchild Power Switch (FPS) for Half-Bridge PWM Converters | Fairchild Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |