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PDF PBSS4032NX Data sheet ( Hoja de datos )

Número de pieza PBSS4032NX
Descripción 4.7 A NPN low VCEsat (BISS) transistor
Fabricantes NXP Semiconductors 
Logotipo NXP Semiconductors Logotipo



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PBSS4032NX
30 V, 4.7 A NPN low VCEsat (BISS) transistor
Rev. 01 — 1 April 2010
Product data sheet
1. Product profile
1.1 General description
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and
flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package.
PNP complement: PBSS4032PX.
1.2 Features and benefits
„ Very low collector-emitter saturation voltage VCEsat
„ Optimized switching time
„ High collector current capability IC and ICM
„ High collector current gain (hFE) at high IC
„ High energy efficiency due to less heat generation
„ AEC-Q101 qualified
„ Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
„ Battery-driven devices
„ Power management
„ Charging circuits
„ Power switches (e.g. motors, fans)
1.4 Quick reference data
Table 1.
Symbol
VCEO
IC
ICM
RCEsat
Quick reference data
Parameter
Conditions
collector-emitter voltage open base
collector current
peak collector current
collector-emitter
saturation resistance
single pulse;
tp 1 ms
IC = 4 A;
IB = 400 mA
[1] Pulse test: tp 300 μs; δ ≤ 0.02.
Min Typ Max Unit
- - 30 V
- - 4.7 A
- - 10 A
[1] - 45 62.5 mΩ

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PBSS4032NX pdf
NXP Semiconductors
www.DataSheet4U.com
PBSS4032NX
30 V, 4.7 A NPN low VCEsat (BISS) transistor
102
Zth(j-a)
(K/W)
10
duty cycle = 1
0.5
0.2
0.75
0.33
0.1
0.05
0.02
1 0.01
0
006aac176
101
105
104
103
102
101
1
10 102 103
tp (s)
FR4 PCB, mounting pad for collector 6 cm2
Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
102
duty cycle = 1
Zth(j-a)
(K/W)
0.75
0.5
0.33
10 0.2
0.1
0.05
0.02
1 0.01 0
006aac177
101
105
104
103
102
101
1
10 102 103
tp (s)
Ceramic PCB, Al2O3, standard footprint
Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PBSS4032NX_1
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 1 April 2010
© NXP B.V. 2010. All rights reserved.
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PBSS4032NX arduino
NXP Semiconductors
11. Soldering
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PBSS4032NX
30 V, 4.7 A NPN low VCEsat (BISS) transistor
4.75
2.25
2
1.9
1.2
0.85 0.2
1.2
4.6
1.7
4.85
0.5
1 1.1
(3×) (2×)
1.5 1.5
3.95
0.6
(3×)
0.7
(3×)
Fig 16. Reflow soldering footprint SOT89 (SC-62)
6.6
2.4
solder lands
solder resist
solder paste
occupied area
Dimensions in mm
sot089_fr
3.5
7.6
0.5
1.8
(2×)
solder lands
solder resist
occupied area
Dimensions in mm
1.9 1.9
1.5
(2×)
0.7
5.3
Fig 17. Wave soldering footprint SOT89 (SC-62)
preferred transport direction during soldering
sot089_fw
PBSS4032NX_1
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 1 April 2010
© NXP B.V. 2010. All rights reserved.
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