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Número de pieza | PBSS4032NX | |
Descripción | 4.7 A NPN low VCEsat (BISS) transistor | |
Fabricantes | NXP Semiconductors | |
Logotipo | ||
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PBSS4032NX
30 V, 4.7 A NPN low VCEsat (BISS) transistor
Rev. 01 — 1 April 2010
Product data sheet
1. Product profile
1.1 General description
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and
flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package.
PNP complement: PBSS4032PX.
1.2 Features and benefits
Very low collector-emitter saturation voltage VCEsat
Optimized switching time
High collector current capability IC and ICM
High collector current gain (hFE) at high IC
High energy efficiency due to less heat generation
AEC-Q101 qualified
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
Battery-driven devices
Power management
Charging circuits
Power switches (e.g. motors, fans)
1.4 Quick reference data
Table 1.
Symbol
VCEO
IC
ICM
RCEsat
Quick reference data
Parameter
Conditions
collector-emitter voltage open base
collector current
peak collector current
collector-emitter
saturation resistance
single pulse;
tp ≤ 1 ms
IC = 4 A;
IB = 400 mA
[1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
Min Typ Max Unit
- - 30 V
- - 4.7 A
- - 10 A
[1] - 45 62.5 mΩ
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PBSS4032NX
30 V, 4.7 A NPN low VCEsat (BISS) transistor
102
Zth(j-a)
(K/W)
10
duty cycle = 1
0.5
0.2
0.75
0.33
0.1
0.05
0.02
1 0.01
0
006aac176
10−1
10−5
10−4
10−3
10−2
10−1
1
10 102 103
tp (s)
FR4 PCB, mounting pad for collector 6 cm2
Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
102
duty cycle = 1
Zth(j-a)
(K/W)
0.75
0.5
0.33
10 0.2
0.1
0.05
0.02
1 0.01 0
006aac177
10−1
10−5
10−4
10−3
10−2
10−1
1
10 102 103
tp (s)
Ceramic PCB, Al2O3, standard footprint
Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PBSS4032NX_1
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 1 April 2010
© NXP B.V. 2010. All rights reserved.
5 of 15
5 Page NXP Semiconductors
11. Soldering
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PBSS4032NX
30 V, 4.7 A NPN low VCEsat (BISS) transistor
4.75
2.25
2
1.9
1.2
0.85 0.2
1.2
4.6
1.7
4.85
0.5
1 1.1
(3×) (2×)
1.5 1.5
3.95
0.6
(3×)
0.7
(3×)
Fig 16. Reflow soldering footprint SOT89 (SC-62)
6.6
2.4
solder lands
solder resist
solder paste
occupied area
Dimensions in mm
sot089_fr
3.5
7.6
0.5
1.8
(2×)
solder lands
solder resist
occupied area
Dimensions in mm
1.9 1.9
1.5
(2×)
0.7
5.3
Fig 17. Wave soldering footprint SOT89 (SC-62)
preferred transport direction during soldering
sot089_fw
PBSS4032NX_1
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 1 April 2010
© NXP B.V. 2010. All rights reserved.
11 of 15
11 Page |
Páginas | Total 15 Páginas | |
PDF Descargar | [ Datasheet PBSS4032NX.PDF ] |
Número de pieza | Descripción | Fabricantes |
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PBSS4032NT | 2.6A NPN low VCEsat (BISS) transistor | NXP Semiconductors |
PBSS4032NX | 4.7 A NPN low VCEsat (BISS) transistor | NXP Semiconductors |
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