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Número de pieza | PBSS4041NZ | |
Descripción | 7 A NPN low VCEsat (BISS) transistor | |
Fabricantes | NXP Semiconductors | |
Logotipo | ||
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No Preview Available ! PBSS4041NZ
60 V, 7 A NPN low VCEsat (BISS) transistor
Rev. 01 — 31 March 2010
www.DataSheet4U.com
Product data sheet
1. Product profile
1.1 General description
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73)
medium power Surface-Mounted Device (SMD) plastic package.
PNP complement: PBSS4041PZ.
1.2 Features and benefits
Very low collector-emitter saturation voltage VCEsat
High collector current capability IC and ICM
High collector current gain (hFE) at high IC
High energy efficiency due to less heat generation
AEC-Q101 qualified
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
Loadswitch
Battery-driven devices
Power management
Charging circuits
Power switches (e.g. motors, fans)
1.4 Quick reference data
Table 1.
Symbol
VCEO
IC
ICM
RCEsat
Quick reference data
Parameter
Conditions
collector-emitter voltage open base
collector current
peak collector current
collector-emitter
saturation resistance
single pulse;
tp ≤ 1 ms
IC = 6 A;
IB = 600 mA
[1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
Min Typ Max Unit
- - 60 V
- - 7A
- - 15 A
[1] -
17.5 25
mΩ
1 page NXP Semiconductors
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PBSS4041NZ
60 V, 7 A NPN low VCEsat (BISS) transistor
103
Zth(j-a)
(K/W)
102
10
duty cycle = 1
0.75
0.5
0.33
0.2
0.1
0.05
0.02
1
0.01
0
006aac062
10−1
10−5
10−4
10−3
10−2
10−1
1
10 102 103
tp (s)
FR4 PCB, mounting pad for collector 6 cm2
Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
102
Zth(j-a)
(K/W)
10
duty cycle = 1
0.50
0.20
0.75
0.33
0.10
0.05
0.02
1
0.01
0
006aac063
10−1
10−5
10−4
10−3
10−2
10−1
1
10 102 103
tp (s)
Ceramic PCB, Al2O3, standard footprint
Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PBSS4041NZ_1
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 31 March 2010
© NXP B.V. 2010. All rights reserved.
5 of 15
5 Page NXP Semiconductors
11. Soldering
www.DataSheet4U.com
PBSS4041NZ
60 V, 7 A NPN low VCEsat (BISS) transistor
1.3 1.2
(4×) (4×)
7
3.85
3.6
3.5
0.3
4
3.9 6.1 7.65
1 23
solder lands
solder resist
solder paste
occupied area
Dimensions in mm
2.3
1.2
(3×)
1.3
(3×)
6.15
2.3
Fig 16. Reflow soldering footprint SOT223 (SC-73)
8.9
6.7
PBSS4041NZ_1
Product data sheet
1.9
4
6.2 8.7
1 23
1.9
(3×)
2.7 2.7
1.1
1.9
(2×)
Fig 17. Wave soldering footprint SOT223 (SC-73)
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 31 March 2010
sot223_fr
solder lands
solder resist
occupied area
Dimensions in mm
preferred transport
direction during soldering
sot223_fw
© NXP B.V. 2010. All rights reserved.
11 of 15
11 Page |
Páginas | Total 15 Páginas | |
PDF Descargar | [ Datasheet PBSS4041NZ.PDF ] |
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