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PDF FDFME2P823ZT Data sheet ( Hoja de datos )
| Número de pieza | FDFME2P823ZT | |
| Descripción | Integrated P-Channel PowerTrench MOSFET and Schottky Diode | |
| Fabricantes | Fairchild Semiconductor | |
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FDFME2P823ZT
July 2010
Integrated P-Channel PowerTrench® MOSFET and Schottky Diode
-20 V, -2.6 A, 142 mΩ
Features
General Description
Max rDS(on) = 142 mΩ at VGS = -4.5 V, ID = -2.3 A
Max rDS(on) = 213 mΩ at VGS = -2.5 V, ID = -1.8 A
Max rDS(on) = 331 mΩ at VGS = -1.8 V, ID = -1.5 A
Max rDS(on) = 530 mΩ at VGS = -1.5 V, ID = -1.2 A
Low profile: 0.55 mm maximum in the new package
MicroFET 1.6x1.6 Thin
Schottky: VF < 0.57 V @ 1A
Free from halogenated compounds and antimony oxides
HBM ESD protection level > 1600 V (Note 3)
RoHS Compliant
This device is designed specifically as a single package solution
for the battery charge switch in cellular handset and other
ultra-portable appliacrions. It features as MOSFET with low
on-state resistance and an independently connected low forward
voltage schottky diode for minimum condution losses.
The MicroFET 1.6x1.6 Thin package offers exceptional thermal
performance for it's physical size and is well suited to switching
and linear mode applications.
Applications
Battery Charging
DC-DC Conversion
Pin 1
NC
A
D
K
D
S
G
K
A1
NC 2
D3
6K
5G
4S
BOTTOM
TOP
MicroFET 1.6x1.6 Thin
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
PD
VRRM
IO
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
TA = 25 °C
Power Dissipation for Single Operation
Power Dissipation for Single Operation
Schottky Repetitive Peak Reverse Voltage
TA = 25 °C
TA = 25 °C
Schottky Average Forward Current
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
(Note 1b)
(Note 4)
Ratings
-20
±8
-2.6
-6
1.4
0.6
28
1
-55 to +150
Units
V
V
A
W
V
A
°C
RθJA
RθJA
RθJA
RθJA
Thermal Resistance, Junction to Ambient (Single Operation)
Thermal Resistance, Junction to Ambient (Single Operation)
Thermal Resistance, Junction to Ambient (Single Operation)
Thermal Resistance, Junction to Ambient (Single Operation)
Package Marking and Ordering Information
(Note 1a)
(Note 1b)
(Note 1c)
(Note 1d)
90
195
110
234
°C/W
Device Marking
3T
Device
FDFME2P823ZT
©2010 Fairchild Semiconductor Corporation
FDFME2P823ZT Rev.C1
Package
MicroFET 1.6x1.6 Thin
1
Reel Size
7 ’’
Tape Width
8 mm
Quantity
5000 units
www.fairchildsemi.com
1 page  
Typical Characteristics TJ = 25°C unless otherwise noted
4.5
ID = -2.3 A
3.0
1.5
VDD = -8 V
VDD = -10 V
VDD = -12 V
0.0
0
24
Qg, GATE CHARGE (nC)
6
Figure 7. Gate Charge Characteristics
1000
Ciss
100 Coss
Crss
f = 1 MHz
VGS = 0 V
10
0.1
1
10
-VDS, DRAIN TO SOURCE VOLTAGE (V)
20
Figure8. CapacitancevsDrain
to Source Voltage
10
100 us
1 ms
1
THIS AREA IS
LIMITED BY rDS(on)
0.1 SINGLE PULSE
TJ = MAX RATED
RθJA = 195 oC/W
TA = 25 oC
0.01
0.1
1
10 ms
100 ms
1s
10 s
DC
10 60
-VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 9. Forward Bias Safe
Operating Area
10-2
TJ = 125 oC
10-3
TJ = 100 oC
10-4
10-5
10-6
0
TJ = 25 oC
5 10 15 20 25
VR, REVERSE VOLTAGE (V)
30
10-1
10-2 VDS = 0 V
10-3
10-4
10-5 TJ = 125 oC
10-6
10-7
10-8 TJ = 25 oC
10-9
0 3 6 9 12
-VGS, GATE TO SOURCE VOLTAGE (V)
15
Figure 10. Gate Leakage Current vs
Gate to Source Voltage
5
1
TJ = 125 oC
0.1
0.01
TJ = 25 oC
0.001
0.0
0.2 0.4 0.6
VF, FORWARD VOLTAGE (mV)
0.8
Figure 11. Schottky Diode Reverse Current
Figure 12. Schottky Diode Forward Voltage
©2010 Fairchild Semiconductor Corporation
FDFME2P823ZT Rev.C1
5
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet FDFME2P823ZT.PDF ] | |
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