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PDF FDME1034CZT Data sheet ( Hoja de datos )

Número de pieza FDME1034CZT
Descripción Complementary PowerTrench MOSFET
Fabricantes Fairchild Semiconductor 
Logotipo Fairchild Semiconductor Logotipo



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No Preview Available ! FDME1034CZT Hoja de datos, Descripción, Manual

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December 2009
FDME1034CZT
Complementary PowerTrench® MOSFET
N-channel: 20 V, 3.4 A, 66 mP-channel: -20 V, -2.3 A, 142 m
Features
General Description
Q1: N-Channel
„ Max rDS(on) = 66 mat VGS = 4.5 V, ID = 3.4 A
„ Max rDS(on) = 86 mat VGS = 2.5 V, ID = 2.9 A
„ Max rDS(on) = 113 mat VGS = 1.8 V, ID = 2.5 A
„ Max rDS(on) = 160 mat VGS = 1.5 V, ID = 2.1 A
Q2: P-Channel
„ Max rDS(on) = 142 mat VGS = -4.5 V, ID = -2.3 A
„ Max rDS(on) = 213 mat VGS = -2.5 V, ID = -1.8 A
„ Max rDS(on) = 331 mat VGS = -1.8 V, ID = -1.5 A
„ Max rDS(on) = 530 mat VGS = -1.5 V, ID = -1.2 A
„ Low profile: 0.55 mm maximum in the new package
MicroFET 1.6x1.6 Thin
„ Free from halogenated compounds and antimony
oxides
This device is designed specifically as a single package solution
for a DC/DC ‘Switching’ MOSFET in cellular handset and other
ultra-portable applications. It features an independent
N-Channel & P-Channel MOSFET with low on-state resistance
for minimum conduction losses. The gate charge of each
MOSFET is also minimized to allow high frequency switching
directly from the controlling device.
The MicroFET 1.6x1.6 Thin package offers exceptional thermal
performance for it's physical size and is well suited to switching
and linear mode applications.
Applications
„ DC-DC Conversion
„ Level Shifted Load Switch
„ HBM ESD protection level > 1600V (Note3)
„ RoHS Compliant
Pin 1
G1
S1
D2
D2
D1
S2
G2
D1
S1 1
G1 2
D2 3
6 D1
5 G2
4 S2
BOTTOM MicroFET 1.6x1.6 Thin
TOP
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
TA = 25 °C
Power Dissipation for Single Operation TA = 25 °C
Power Dissipation for Single Operation TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
(Note 1b)
RθJA
RθJA
Thermal Resistance, Junction to Ambient (Single Operation)
Thermal Resistance, Junction to Ambient (Single Operation)
Package Marking and Ordering Information
(Note 1a)
(Note 1b)
Device Marking
5T
Device
FDME1034CZT
Package
MicroFET 1.6x1.6 Thin
Reel Size
7 ’’
Q1 Q2
20 -20
±8 ±8
3.4 -2.3
6 -6
1.3
0.6
-55 to +150
Units
V
V
A
W
°C
95
°C/W
210
Tape Width
8 mm
Quantity
5000 units
©2009 Fairchild Semiconductor Corporation
FDME1034CZT Rev.C
1
www.fairchildsemi.com

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FDME1034CZT pdf
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Typical Characteristics (Q1 N-Channel) TJ = 25°C unless otherwise noted
4.5
ID = 3.4 A
VDD = 8 V
3.0
VDD = 10 V
VDD = 12 V
1.5
0.0
0
12
Qg, GATE CHARGE (nC)
3
Figure 7. Gate Charge Characteristics
500
Ciss
100
Coss
f = 1 MHz
Crss
VGS = 0 V
1
0.1
1
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
20
Figure8. CapacitancevsDrain
to Source Voltage
10
100 µs
1 ms
1
THIS AREA IS
LIMITED BY rDS(on)
0.1 SINGLE PULSE
TJ = MAX RATED
RθJA = 210 oC/W
TA = 25 oC
0.01
0.1
1
10
VDS, DRAIN to SOURCE VOLTAGE (V)
10 ms
100 ms
1s
10 s
DC
50
Figure 9. Forward Bias Safe
Operating Area
100
10
10-1
10-2 VGS = 0 V
10-3
10-4
10-5 TJ = 125 oC
10-6
10-7
10-8
10-9
0
TJ = 25 oC
3 6 9 12
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 10. Gate Leakage Current vs
Gate to Source Voltage
15
SINGLE PULSE
RθJA = 210 oC/W
TA = 25 oC
1
0.5
10-4
10-3
10-2
10-1
1
t, PULSE WIDTH (s)
10
Figure 11. Single Pulse Maximum Power Dissipation
100
1000
©2009 Fairchild Semiconductor Corporation
FDME1034CZT Rev.C
5
www.fairchildsemi.com

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FDME1034CZT arduino
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TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
AccuPower™
Auto-SPM™
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT
CTL™
Current Transfer Logic™
DEUXPEED®
EcoSPARK®
EfficentMax™
EZSWITCH™*
™*
®
tm
Fairchild®
Fairchild Semiconductor®
FACT Quiet Series™
FACT®
FAST®
FastvCore™
FETBench™
FlashWriter® *
FPS™
F-PFS™
FRFET®
Global Power ResourceSM
Green FPS™
Green FPS™ e-Series™
Gmax
GTO™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MillerDrive™
MotionMax™
Motion-SPM™
OPTOLOGIC®
OPTOPLANAR®
®
tm
PDP SPM™
Power-SPM™
PowerTrench®
PowerXS™
Programmable Active Droop™
QFET®
QS™
Quiet Series™
RapidConfigure™
Saving our world, 1mW/W/kW at a time™
SignalWise™
SmartMax™
SMART START™
SPM®
STEALTH™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS™
SyncFET™
Sync-Lock™
®*
The Power Franchise®
®
tm
TinyBoost™
TinyBuck™
TinyCalc™
TinyLogic®
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
TriFault Detect™
TRUECURRENT™*
µSerDes™
UHC®
Ultra FRFET™
UniFET™
VCX™
VisualMax™
XS™
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website,
www.Fairchildsemi.com, under Sales Support.
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their
parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed
application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the
proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild
Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild
Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of
up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and
warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is
committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Advance Information
Formative / In Design
Preliminary
First Production
No Identification Needed
Obsolete
Full Production
Not In Production
©2009 Fairchild Semiconductor Corporation
FDME1034CZT Rev.C
Definition
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I44
11 www.fairchildsemi.com

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