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PDF FDME1023PZT Data sheet ( Hoja de datos )
| Número de pieza | FDME1023PZT | |
| Descripción | Dual P-Channel PowerTrench MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
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FDME1023PZT
Dual P-Channel PowerTrench® MOSFET
-20 V, -2.3 A, 142 mΩ
December 2009
Features
Max rDS(on) = 142 mΩ at VGS = -4.5 V, ID = -2.3 A
Max rDS(on) = 213 mΩ at VGS = -2.5 V, ID = -1.8 A
Max rDS(on) = 331 mΩ at VGS = -1.8 V, ID = -1.5 A
Max rDS(on) = 530 mΩ at VGS = -1.5 V, ID = -1.2 A
Low profile: 0.55 mm maximum in the new package
MicroFET 1.6x1.6 Thin
Free from halogenated compounds and antimony oxides
General Description
This device is designed specifically as a single package solution
for the battery charges switch in cellular handset and other
ultra-portable applications. It features two independent
P-Channel MOSFETs with low on-state resistance for minimum
conduction losses. When connected in the typical common
source configuration, bi-directional current flow is possible.
The MicroFET 1.6x1.6 Thin package offers exceptional thermal
performance for it's physical size and is well suited to switching
and linear mode applications.
HBM ESD protection level > 1600V (Note3)
RoHS Compliant
Applications
Load Switch
Battery Charging
Battery Disconnect Switch
Pin 1
G1
S1
D2
D2
D1
S2
G2
D1
S1 1
G1 2
D2 3
6 D1
5 G2
4 S2
BOTTOM
MicroFET 1.6x1.6 Thin
TOP
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
TA = 25 °C
Power Dissipation for Single Operation
TA = 25 °C
Power Dissipation for Single Operation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
(Note 1b)
Ratings
-20
±8
-2.3
-6
1.3
0.6
-55 to +150
Units
V
V
A
W
°C
RθJA
RθJA
Thermal Resistance, Junction to Ambient (Single Operation)
Thermal Resistance, Junction to Ambient (Single Operation)
Package Marking and Ordering Information
(Note 1a)
(Note 1b)
95
210
°C/W
Device Marking
2T
Device
FDME1023PZT
Package
MicroFET 1.6x1.6 Thin
Reel Size
7 ’’
Tape Width
8 mm
Quantity
5000 units
©2009 Fairchild Semiconductor Corporation
FDME1023PZT Rev.C
1
www.fairchildsemi.com
1 page  
www.DataSheet4U.com
Typical Characteristics TJ = 25 °C unless otherwise noted
2
1
0.1
0.01
10-3
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
RθJA = 210 oC/W
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
10-2
10-1
1
10
t, RECTANGULAR PULSE DURATION (s)
100
Figure 12. Junction-to-Ambient Transient Thermal Response Curve
1000
©2009 Fairchild Semiconductor Corporation
FDME1023PZT Rev.C
5
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet FDME1023PZT.PDF ] | |
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