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PDF LHF00L14 Data sheet ( Hoja de datos )
| Número de pieza | LHF00L14 | |
| Descripción | Flash Memory 32M (2MB x 16) | |
| Fabricantes | Sharp Microelectronics | |
| Logotipo |  |
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PRODUCT SPECIFICATIONS
®
www.DataSheet4U.com
Integrated Circuits Group
LHF00L14
Flash Memory
32M (2Mb × 16)
(Model No.: LHF00L14)
Spec No.: EL163055
Issue Date: March 15, 2004
1 page  
LHF00L14
2www.DataSheet4U.com
LHF00L14
32Mbit (2Mbit×16)
Flash MEMORY
32-M density with 16-bit I/O Interface
Read Operation
• 90ns
Low Power Operation
• 2.7V Read and Write Operations
• Automatic Power Savings Mode reduces ICCR
in Static Mode
Enhanced Code + Data Storage
• 5µs Typical Erase/Program Suspends
OTP (One Time Program) Block
• 4-Word Factory-Programmed Area
• 4-Word User-Programmable Area
Operating Temperature -40°C to +85°C
CMOS Process (P-type silicon substrate)
Flexible Blocking Architecture
• Eight 4-Kword Parameter Blocks
• One 32-Kword Block
• Thirty-one 64-Kword Blocks
• Top Parameter Location
Enhanced Data Protection Features
• Individual Block Lock and Block Lock-Down with
Zero-Latency
• All blocks are locked at power-up or device reset.
• Block Erase, Full Chip Erase, Word Program Lockout
during Power Transitions
Automated Erase/Program Algorithms
• 3.0V Low-Power 10µs/Word (Typ.)
Programming
• 12.0V No Glue Logic 9µs/Word (Typ.)
Production Programming and 0.8s Erase (Typ.)
Cross-Compatible Command Support
• Basic Command Set
• Common Flash Interface (CFI)
Extended Cycling Capability
• Minimum 100,000 Block Erase Cycles
48-Lead TSOP (Normal Bend)
ETOXTM* Flash Technology
Not designed or rated as radiation hardened
The product is a low power, high density, low cost, nonvolatile read/write storage solution for a wide range of applications.
The product can operate at VCC=2.7V-3.6V. Its low voltage operation capability greatly extends battery life for portable
applications.
The memory array block architecture utilizes Enhanced Data Protection features, which provides maximum flexibility for
safe nonvolatile code and data storage.
Special OTP (One Time Program) block provides an area to store permanent code such as an unique number.
* ETOX is a trademark of Intel Corporation.
Rev. 2.45
5 Page 
LHF00L14
8www.DataSheet4U.com
Table 3. Bus Operation(1, 2)
Mode
Notes RST# CE# OE# WE# Address DQ15-0 RY/BY# (8)
Read Array
6 VIH VIL VIL VIH
X
DOUT
High Z
Output Disable
VIH VIL VIH VIH X High Z X
Standby
VIH VIH
X
X
X High Z X
Reset
3 VIL
X
X
X
X High Z High Z
Read Identifier
Codes/OTP
6
VIH
VIL
VIL
VIH
See
Table 2
See
Table 2
High Z
Read Query
6,7 VIH
VIL
VIL
VIH
See See
Appendix Appendix
High Z
Read Status
Register
6 VIH VIL VIL VIH
X
DOUT
X
Write
4,5,6 VIH VIL VIH VIL
X
DIN
X
NOTES:
1. Refer to DC Characteristics for VIL or VIH voltages.
2. X can be VIL or VIH for control pins and addresses.
3. RST# at GND±0.2V ensures the lowest power consumption.
4. Command writes involving block erase, full chip erase, program or OTP program are reliably
executed when VCC=2.7V-3.6V.
5. Refer to Table 4 for valid DIN during a write operation.
6. Never hold OE# low and WE# low at the same timing.
7. Refer to Appendix of LHF00LXX series for more information about query code.
8. RY/BY# is VOL when the WSM (Write State Machine) is executing internal block erase, full chip erase, program or OTP
program algorithms. It is High Z during when the WSM is not busy, in block erase suspend mode (with program inactive),
program suspend mode, or reset mode.
Rev. 2.45
11 Page | ||
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