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Número de pieza | QS8J1 | |
Descripción | 1.5V Drive PchPch MOSFET | |
Fabricantes | ROHM Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de QS8J1 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! Transistors
1.5V Drive Pch+Pch MOSFET
QS8J1
www.DataSheet4U.com
QS8J1
zStructure
Silicon P-channel MOSFET
zFeatures
1) Low On-resistance.
2) Low voltage drive. (1.5 V)
3) High power package.
zDimensions (Unit : mm)
TSMT8
(8) (7) (6) (5)
(1) (2) (3) (4)
zApplications
Switching
Abbreviated symbol : J01 Each lead has same dimensions
zPackaging specifications
Type
QS8J1
Package
Code
Basic ordering unit (pieces)
Taping
TR
3000
zInner circuit
(8) (7) (6) (5)
∗2 ∗2
∗1 ∗1
zAbsolute maximum ratings (Ta=25°C)
<It is the same ratings for Tr1 and Tr2.>
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Continuous
Pulsed
Continuous
Pulsed
Symbol
VDSS
VGSS
ID
IDP ∗1
IS
ISP ∗1
Total power dissipation
PD ∗2
Channel temperature
Range of Storage temperature
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board
Tch
Tstg
Limits
−12
±10
±4.5
±18
−1
−18
1.5
1.25
150
−55 to +150
(1) (2) (3)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
(4)
Unit
V
V
A
A
A
A
W / TOTAL
W / ELEMENT
°C
°C
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Source
(4) Tr2 Gate
(5) Tr2 Drain
(6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain
zThermal resistance
Parameter
Channel to ambient
∗ Mounted on a ceramic board.
Symbol
Rth(ch-a) ∗
Limits
83.3
100
Unit
°C/W / TOTAL
°C/W / ELEMENT
1/5
1 page Transistors
zMeasurement circuits
VGS
RG
ID
D.U.T.
VDS
RL
VDD
Fig.1-1 Switching Time Measurement Circuit
www.DataSheet4U.com
QS8J1
Pulse width
VGS 10%
50%
90% 50%
10%
10%
VDS
td(on)
90%
tr
ton
td(off)
90%
tf
toff
Fig.1-2 Switching Time Waveforms
VGS
IG(Const.)
RG
ID
D.U.T.
VDS
RL
VDD
Fig.2-1 Gate Charge Measurement Circuit
VG
VGS
Qgs
Qg
Qgd
Charge
Fig.2-2 Gate Charge Waveform
zNotice
This product might cause chip aging and breakdown under the large electrified environment.
Please consider to design ESD protection circuit.
5/5
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet QS8J1.PDF ] |
Número de pieza | Descripción | Fabricantes |
QS8J1 | 1.5V Drive PchPch MOSFET | ROHM Semiconductor |
QS8J2 | -12V Pch + Pch Middle Power MOSFET | ROHM Semiconductor |
QS8J4 | 4V Drive Pch Pch MOSFET | ROHM Semiconductor |
QS8J5 | 4V Drive Pch Pch MOSFET | ROHM Semiconductor |
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