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Número de pieza | LHF00L31 | |
Descripción | Flash Memory 16M (1Mb x 16) | |
Fabricantes | Sharp Microelectronics | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de LHF00L31 (archivo pdf) en la parte inferior de esta página. Total 30 Páginas | ||
No Preview Available ! PRELIMINARY PRODUCT SPECIFICATION
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LHF00L31
Flash Memory
16M (1Mb x 16)
(Model Number: LHF00L31)
Spec. Issue Date: May 25, 2004
Spec No: FM045026
1 page LHF00L31
2
LHF00L31
16Mbit (1Mbit×16)
Flash MEMORY
www.DataSheet4U.com
16-M density with 16-bit I/O Interface
Read Operation
• 70ns
Low Power Operation
• 2.7V Read and Write Operations
• VCCQ for Input/Output Power Supply Isolation
• Automatic Power Savings Mode reduces ICCR
in Static Mode
Enhanced Code + Data Storage
• 5µs Typical Erase/Program Suspends
OTP (One Time Program) Block
• 4-Word Factory-Programmed Area
• 4-Word User-Programmable Area
Operating Temperature -40°C to +85°C
CMOS Process (P-type silicon substrate)
Flexible Blocking Architecture
• Eight 4-Kword Parameter Blocks
• One 32-Kword Block
• Fifteen 64-Kword Blocks
• Bottom Parameter Location
Enhanced Data Protection Features
• Individual Block Lock and Block Lock-Down with
Zero-Latency
• All blocks are locked at power-up or device reset.
• Absolute Protection with VPP≤VPPLK
• Block Erase, Full Chip Erase, Word Program Lockout
during Power Transitions
Automated Erase/Program Algorithms
• 3.0V Low-Power 10µs/Word (Typ.)
Programming
• 12.0V No Glue Logic 9µs/Word (Typ.)
Production Programming and 0.8s Erase (Typ.)
Cross-Compatible Command Support
• Basic Command Set
• Common Flash Interface (CFI)
Extended Cycling Capability
• Minimum 100,000 Block Erase Cycles
48-Lead TSOP (Normal Bend)
ETOXTM* Flash Technology
Not designed or rated as radiation hardened
The product is a low power, high density, low cost, nonvolatile read/write storage solution for a wide range of applications.
The product can operate at VCC=2.7V-3.6V and VPP=1.65V-3.6V or 11.7V-12.3V. Its low voltage operation capability
greatly extends battery life for portable applications.
The memory array block architecture utilizes Enhanced Data Protection features, which provides maximum flexibility for
safe nonvolatile code and data storage.
Special OTP (One Time Program) block provides an area to store permanent code such as an unique number.
* ETOX is a trademark of Intel Corporation.
Rev. 2.45
5 Page LHF00L31
8
Table 3. Bus Operation(1, 2)
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Mode
Notes RST# CE# OE# WE# Address VPP DQ15-0
Read Array
6 VIH VIL VIL VIH
X
X DOUT
Output Disable
VIH VIL VIH VIH
X
X High Z
Standby
VIH VIH
X
X
X
X High Z
Reset
3 VIL
X
X
X
X
X High Z
Read Identifier
Codes/OTP
6
VIH
VIL
VIL
VIH
See
Table 2
X
See
Table 2
Read Query
6,7 VIH
VIL
VIL
VIH
See
Appendix
X
See
Appendix
Read Status
Register
6 VIH VIL VIL VIH
X
X DOUT
Write
4,5,6 VIH VIL VIH VIL
X
VPPH1/2
DIN
NOTES:
1. Refer to DC Characteristics. When VPP≤VPPLK, memory contents can be read, but cannot be altered.
2. X can be VIL or VIH for control pins and addresses, and VPPLK or VPPH1/2 for VPP.
Refer to DC Characteristics for VPPLK and VPPH1/2 voltages.
3. RST# at GND±0.2V ensures the lowest power consumption.
4. Command writes involving block erase, full chip erase, program or OTP program are
reliably executed when VPP=VPPH1/2 and VCC=2.7V-3.6V.
5. Refer to Table 4 for valid DIN during a write operation.
6. Never hold OE# low and WE# low at the same timing.
7. Refer to Appendix of LHF00LXX series for more information about query code.
Rev. 2.45
11 Page |
Páginas | Total 30 Páginas | |
PDF Descargar | [ Datasheet LHF00L31.PDF ] |
Número de pieza | Descripción | Fabricantes |
LHF00L31 | Flash Memory 16M (1Mb x 16) | Sharp Microelectronics |
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