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PDF VND920-E Data sheet ( Hoja de datos )
| Número de pieza | VND920-E | |
| Descripción | DOUBLE CHANNEL HIGH SIDE SOLID STATE RELAY | |
| Fabricantes | ST Microelectronics | |
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VND920-E
DOUBLE CHANNEL HIGH SIDE SOLID STATE RELAY
Table 1. General Features
Type
RDS(on)
IOUT
VND920-E
16mΩ
35 A (*)
(*) Per channel with all the output pins connected to the PCB.
VCC
36 V
s CMOS COMPATIBLE INPUT
s PROPORTIONAL LOAD CURRENT SENSE
s SHORTED LOAD PROTECTION
s UNDERVOLTAGE AND OVERVOLTAGE
SHUTDOWN
s OVERVOLTAGE CLAMP
s THERMAL SHUTDOWN
s CURRENT LIMITATION
s PROTECTION AGAINST LOSS OF GROUND
AND LOSS OF VCC
s VERY LOW STAND-BY POWER DISSIPATION
s REVERSE BATTERY PROTECTION (**)
s IN COMPLIANCE WITH THE 2002/95/EC
EUROPEAN DIRECTIVE
Figure 1. Package
SO-28 (DOUBLE ISLAND)
Active current limitation combined with thermal
shutdown and automatic restart protect the device
against overload. Built-in analog current sense
output delivers a current proportional to the load
current. Device automatically turns off in case of
ground pin disconnection.
DESCRIPTION
The VND920-E is a double chip device made by
using STMicroelectronics VIPower M0-3
Technology, intended for driving any kind of load
with one side connected to ground. Active VCC pin
voltage clamp protects the device against low
energy spikes (see ISO7637 transient
compatibility table).
Table 2. Order Codes
Package
PowerSO-10
VND920-E
Tube
Tape and Reel
VND920TR-E
Note: (**) See application schematic at page 9.
October 2004
Rev. 1
1/19
1 page  
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ELECTRICAL CHARACTERISTICS (continued)
Table 7. Switching (VCC =13V)
Symbol
td(on)
td(off)
Parameter
Turn-on Delay Time
Turn-off Delay Time
dVOUT/
dt(on)
Turn-on Voltage Slope
dVOUT/
dt(off)
Turn-off Voltage Slope
Test Conditions
RL=1.3Ω (see figure 2)
RL=1.3Ω (see figure 2)
RL=1.3Ω (see figure 2)
RL=1.3Ω (see figure 2)
Min Typ Max
50
50
See
relative
diagram
See
relative
diagram
Unit
µs
µs
V/µs
V/µs
Table 8. Logic Input
Symbol
Parameter
Symbol
Parameter
VIL Input Low Level
IIL Low Level Input Current
VIH Input High Level
IIH High Level Input Current
VI(hyst) Input Hysteresis Voltage
Test Conditions
Test Conditions
VIN=1.25V
VIN=3.25V
Min Typ Max Unit
Min Typ Max Unit
1.25 V
1 µA
3.25
V
10 µA
0.5 V
Table 9. VCC - Output Diode
Symbol
Parameter
VF Forward on Voltage
Test Conditions
-IOUT=5A; Tj=150°C
Min.
Typ.
Max. Unit
0.6 V
Table 10. Protections (see note 3)
Symbol
TTSD
TR
Thyst
Parameter
Shut-down Temperature
Reset Temperature
Thermal Hysteresis
Ilim DC Short Circuit Current
Vdemag
VON
Turn-off Output Clamp
Voltage
Output Voltage Drop
Limitation
Test Conditions
VCC=13V
5V<VCC<36V
IOUT=2A; VIN=0V; L=6mH
IOUT=1A; Tj=-40°C....+150°C
Min Typ Max Unit
150 175 200 °C
135 °C
7 15
°C
30 45 75 A
75 A
VCC-41 VCC-48 VCC-55 V
50 mV
Note: 3. To ensure long term reliability under heavy overload or short circuit conditions, protection and related diagnostic signals must be
used together with a proper software strategy. If the device is subjected to abnormal conditions, this software must limit the duration
and number of activation cycles.
5/19
5 Page 
Figure 8. Off State Output Current
IL(off1) (uA)
9
8
7
6
5
4
3
2
1
0
-50
-25
0
25 50 75 100 125 150 175
Tc (°C)
Figure 10. Input Clamp Voltage
Vicl (V)
8
7.8
Iin=1mA
7.6
7.4
7.2
7
6.8
6.6
6.4
6.2
6
-50 -25 0 25
50 75
Tc (°C)
100 125 150
175
Figure 11. On State Resistance Vs Tcase
Ron (mOhm)
50
45
40 Iout=10A
Vcc=8V; 36V
35
30
25
20
15
10
5
0
-50 -25 0 25 50 75 100 125 150 175
Tc (ºC)
wVwNwD.D9a2ta0S-hEeet4U.com
Figure 9. High Level Input Current
Iih (uA)
5
4.5
Vin=3.25V
4
3.5
3
2.5
2
1.5
1
0.5
0
-50 -25 0 25
50 75
Tc (°C)
100 125 150
175
Figure 12. On State Resistance Vs VCC
Ron (mOhm)
50
45
40
35
Tc= 150ºC
30
25
20
Tc= 25ºC
15
10
Tc= - 40ºC
5
0
5 10 15 20 25 30 35
Vcc (V)
40
Figure 13. Input High Level
Vih (V)
3.6
3.4
3.2
3
2.8
2.6
2.4
2.2
2
-50 -25 0 25 50 75 100 125 150 175
Tc (°C)
11/19
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| PDF Descargar | [ Datasheet VND920-E.PDF ] | |
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