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PDF BLF7G22LS-130 Data sheet ( Hoja de datos )
| Número de pieza | BLF7G22LS-130 | |
| Descripción | Power LDMOS transistor | |
| Fabricantes | NXP Semiconductors | |
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BLF7G22LS-130
Power LDMOS transistor
Rev. 01 — 2 February 2010
www.DataSheet4U.com
Product data sheet
1. Product profile
1.1 General description
130 W LDMOS power transistor for base station applications at frequencies from
2000 MHz to 2200 MHz.
Table 1. Typical performance
Typical RF performance at Tcase = 25 °C in a common source class-AB production test circuit.
Mode of operation
f
IDq
VDS PL(AV) Gp
ηD ACPR
(MHz)
(mA) (V) (W)
(dB) (%) (dBc)
2-carrier W-CDMA
2110 to 2170
950 28 30
18.5 32 −32[1]
1-carrier W-CDMA
2110 to 2170
950 28 33
18.5 34 −39[2]
[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF;
carrier spacing 5 MHz.
[2] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF.
1.2 Features and benefits
Excellent ruggedness
High efficiency
Low Rth providing excellent thermal stability
Designed for broadband operation (2000 MHz to 2200 MHz)
Lower output capacitance for improved performance in Doherty applications
Designed for low memory effects providing excellent digital pre-distortion capability
Internally matched for ease of use
Integrated ESD protection
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
RF power amplifiers for W-CDMA base stations and multi carrier applications in the
2000 MHz to 2200 MHz frequency range
1 page  
NXP Semiconductors
BLF7G22LS-130
www.DataSheet4U.com
Power LDMOS transistor
18.4
Gp
(dB)
18
17.6
17.2
(1)
(2)
(3)
001aal345
60
ηD
(%)
40
20
001aal346
(1)
(2)
(3)
16.8
0
30 60 90
PL (W)
VDS = 28 V; IDq = 950 mA.
(1) f = 2112.5 MHz.
(2) f = 2140 MHz.
(3) f = 2167.5 MHz.
Fig 5. Power gain as function of load power; typical
values
0
0 30 60 90
PL (W)
VDS = 28 V; IDq = 950 mA.
(1) f = 2112.5 MHz.
(2) f = 2140 MHz.
(3) f = 2167.5 MHz.
Fig 6. Drain efficiency as function of load power;
typical values
8
PAR
(dB)
6
4
2
001aal347
(1)
(2)
(3)
0
ACPR5M
(dBc)
−20
−40
(1)
(2)
(3)
001aal348
0
0 30 60 90
PL (W)
VDS = 28 V; IDq = 950 mA.
(1) f = 2112.5 MHz.
(2) f = 2140 MHz.
(3) f = 2167.5 MHz.
Fig 7. Peak-to-average power ratio as function of
load power; typical values
−60
0
30 60 90
PL (W)
VDS = 28 V; IDq = 950 mA.
(1) f = 2112.5 MHz.
(2) f = 2140 MHz.
(3) f = 2167.5 MHz.
Fig 8. Adjacent power channel ratio (5 MHz) as
function of load power; typical values
BLF7G22LS-130_1
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 2 February 2010
© NXP B.V. 2010. All rights reserved.
5 of 14
5 Page 
NXP Semiconductors
BLF7G22LS-130
www.DataSheet4U.com
Power LDMOS transistor
9. Abbreviations
Table 9. Abbreviations
Acronym
Description
3GPP
Third Generation Partnership Project
CCDF
Complementary Cumulative Distribution Function
CW Continuous Wave
DPCH
Dedicated Physical CHannel
ESD
ElectroStatic Discharge
LDMOS
Laterally Diffused Metal Oxide Semiconductor
LDMOST
Laterally Diffused Metal Oxide Semiconductor Transistor
PAR Peak-to-Average power Ratio
PDPCH
transmission Power of the Dedicated Physical CHannel
RF Radio Frequency
VSWR
Voltage Standing Wave Ratio
W-CDMA
Wideband Code Division Multiple Access
10. Revision history
Table 10. Revision history
Document ID
BLF7G22LS-130_1
Release date Data sheet status
20100202
Product data sheet
Change notice
-
Supersedes
-
BLF7G22LS-130_1
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 2 February 2010
© NXP B.V. 2010. All rights reserved.
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