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PDF BLF6G22S-45 Data sheet ( Hoja de datos )

Número de pieza BLF6G22S-45
Descripción Power LDMOS transistor
Fabricantes NXP Semiconductors 
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No Preview Available ! BLF6G22S-45 Hoja de datos, Descripción, Manual

BLF6G22S-45
Power LDMOS transistor
Rev. 02 — 17 April 2008
www.DataSheet4U.com
Product data sheet
1. Product profile
1.1 General description
45 W LDMOS power transistor for base station applications at frequencies from
2000 MHz to 2200 MHz.
Table 1. Typical performance
RF performance at Tcase = 25 °C in a common source class-AB production test circuit.
Mode of operation
f
VDS
PL(AV) Gp
ηD
(MHz)
(V) (W) (dB) (%)
2-carrier W-CDMA
2110 to 2170
28 2.5 18.5 13
ACPR
(dBc)
48[1]
[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier;
carrier spacing 5 MHz.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
I Typical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz, a
supply voltage of 28 V and an IDq of 405 mA:
N Average output power = 2.5 W
N Power gain = 18.5 dB (typ)
N Efficiency = 13 %
N ACPR = 48 dBc
I Easy power control
I Integrated ESD protection
I Excellent ruggedness
I High efficiency
I Excellent thermal stability
I Designed for broadband operation (2000 MHz to 2200 MHz)
I Internally matched for ease of use
I Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)

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BLF6G22S-45 pdf
NXP Semiconductors
BLF6G22S-45
www.DataSheet4U.com
Power LDMOS transistor
20
Gp
(dB)
19
18
17
16
001aah607 30
ηD
ηD (%)
25
Gp
20
15
10
30
ACPR
(dBc)
35
40
45
50
55
001aah608
15 5
0 2 4 6 8 10
PL(AV) (W)
60
0 2 4 6 8 10
PL(AV) (W)
Fig 4.
VDS = 28 V; IDq = 405 mA; f1 = 2162.5 MHz;
f2 = 2167.5 MHz; carrier spacing 5 MHz.
2-carrier W-CDMA power gain and drain
efficiency as functions of average load power;
typical values
Fig 5.
VDS = 28 V; IDq = 405 mA; f1 = 2162.5 MHz;
f2 = 2167.5 MHz; carrier spacing 5 MHz.
2-carrier W-CDMA adjacent power channel
ratio as a function of average load power;
typical values
8. Test information
VGG
C3
C4
C5
R1
C2
C6
VDD
C11 C12 C13 C14 C15
C10 C16
C18
input
50
C1
C7
C17
C8 C9
See Table 8 for list of components.
Fig 6. Test circuit for operation at 2110 MHz and 2170 MHz
output
50
001aah609
BLF6G22S-45_2
Product data sheet
Rev. 02 — 17 April 2008
© NXP B.V. 2008. All rights reserved.
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