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PDF BLF6G22LS-130 Data sheet ( Hoja de datos )

Número de pieza BLF6G22LS-130
Descripción Power LDMOS transistor
Fabricantes NXP Semiconductors 
Logotipo NXP Semiconductors Logotipo



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No Preview Available ! BLF6G22LS-130 Hoja de datos, Descripción, Manual

BLF6G22LS-130
Power LDMOS transistor
Rev. 01 — 23 May 2008
www.DataSheet4U.com
Product data sheet
1. Product profile
1.1 General description
130 W LDMOS power transistor for base station applications at frequencies from
2000 MHz to 2200 MHz.
Table 1. Typical performance
RF performance at Tcase = 25 °C in a common source class-AB production test circuit.
Mode of operation f
VDS PL(AV)
Gp ηD IMD3
(MHz)
(V) (W)
(dB) (%) (dBc)
2-carrier W-CDMA 2110 to 2170 28 30
17 28.5 37[1]
ACPR
(dBc)
40[1]
[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 dB at 0.01 % probability on CCDF per carrier;
carrier spacing 10 MHz.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
I Typical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz, a
supply voltage of 28 V and an IDq of 1100 mA:
N Average output power = 30 W
N Power gain = 17 dB (typ)
N Efficiency = 28.5 %
N IMD3 = 37 dBc
N ACPR = 40 dBc
I Easy power control
I Integrated ESD protection
I Excellent ruggedness
I High efficiency
I Excellent thermal stability
I Designed for broadband operation (2000 MHz to 2200 MHz)
I Internally matched for ease of use
I Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)

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BLF6G22LS-130 pdf
NXP Semiconductors
7.3 Two-tone CW
19
Gp
(dB)
17
Gp
ηD
15
BLF6G22LS-130
www.DataSheet4U.com
Power LDMOS transistor
001aai094
60
ηD
(%)
40
20
13 0
0 40 80 120 160
PL (W)
VDS = 28 V; IDq = 1100 mA; f1 = 2169.95 MHz; f2 = 2170.05 MHz.
Fig 2. Two-tone CW power gain and drain efficiency as functions of peak envelope load power; typical values
0
IMD
(dBc)
20
40
001aai095
IMD3
IMD5
IMD7
0
IMD3
(dBc)
20
001aai096
60
80
0
50 100 150 200 250
PL(PEP) (W)
VDS = 28 V; IDq = 1100 mA; f1 = 2169.95 MHz;
f2 = 2170.05 MHz.
Fig 3. Intermodulation distortion as a function of
peak envelope load power; typical values
40
60
0
(1)
(2)
(5)
(3)
(4)
50 100 150 200 250
PL(PEP) (W)
VDS = 28 V; f1 = 2169.95 MHz; f2 = 2170.05 MHz.
(1) IDq = 900 mA
(2) IDq = 1000 mA
(3) IDq = 1100 mA
(4) IDq = 1200 mA
(5) IDq = 1300 mA
Fig 4.
Third order intermodulation distortion as a
function of peak envelope load power;
typical values
BLF6G22LS-130_1
Product data sheet
Rev. 01 — 23 May 2008
© NXP B.V. 2008. All rights reserved.
5 of 11

5 Page





BLF6G22LS-130 arduino
NXP Semiconductors
14. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2
4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Thermal characteristics. . . . . . . . . . . . . . . . . . . 2
6 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3
7 Application information. . . . . . . . . . . . . . . . . . . 3
7.1 Ruggedness in class-AB operation. . . . . . . . . . 3
7.2 One-tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . 4
7.3 Two-tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . 5
7.4 2-carrier W-CDMA . . . . . . . . . . . . . . . . . . . . . . 6
8 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 7
9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8
10 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 9
12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 10
12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10
12.2 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
12.3 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
12.4 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
13 Contact information. . . . . . . . . . . . . . . . . . . . . 10
14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
BLF6G22LS-130
www.DataSheet4U.com
Power LDMOS transistor
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2008.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 23 May 2008
Document identifier: BLF6G22LS-130_1

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