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PDF BD8311NUV Data sheet ( Hoja de datos )

Número de pieza BD8311NUV
Descripción Integrated 2.5A MOSFET 1ch Boost Converter
Fabricantes ROHM Semiconductor 
Logotipo ROHM Semiconductor Logotipo



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Datasheet
3.5V to 11V, Integrated 2.5A MOSFET 1ch
Boost Converter
BD8311NUV
General Description
BD8311NUV is a high-efficiency step-up switching
regulator with built-in power MOSFET that can output
8V or 10V from a 4-battery voltage supply such as
Li2cell or a 5V fixed power supply line. The built-in
80mΩ N-Channel FET switch is capable of handling
output current up to 2.5A. This IC has a flexible phase
compensation system and a switching frequency of
1.2MHz allowing the use of smaller external output
inductor and capacitor making the construction of a
compact power supply really easy.
Key Specification
Input Voltage Range:
Output Voltage Range:
FET Maximum Current:
Switching Frequency:
Nch FET ON-Resistance:
Standby Current:
Operating Temperature Range:
+3.5V to +11.0V
+4.0V to +11.0V
2.5A
1.2MHz(Typ)
80mΩ(Typ)
0μA (Typ)
-25°C to +85°C
Package
W (Typ) x D (Typ) x H (Max)
Features
Built-In 2.5A/14V N-Channel FET Switch
On-Chip Phase Compensation
Between Input and Output of ERROR AMP.
Output Current:
600mA at 10V (3.5V to 10V input)
800mA at 8V (3.5V to 8V input)
Built-In Soft-Start Function.
Built-In Timer Latch System for Short Circuit
Protection Function.
Application
General Portable Equipment like DSC/DVC Powered
by 4 dry Batteries or Li2cell
Typical Application Circuit
Input: 3.5V to 10V, Output: 10V / 500 mA
1100VV//550000mmAA
RSX2R0S1XL20-31L0-3(R0 (ORHOHMM) )
2222µμFF
GGRMM3322EEBB313C12C226K2E61K6E( M16ura(Mta)urata)
6 PGNNDD
1100ppF
200k2Ω00k
OONN/O/OFFF
10kΩ10k
22kΩ22k
110000kkΩ
7 PPGNNDD
8 SSTTBB
9 IINNVV
10 SSWWOOUUTT
VSON010V3030
3.00mm x 3.00mm x 1.00mm
LXLx 5
LXLx 4
VVRREEGG 3
VVCCCC 2
GGNNDD 1
4.77µμHH
DEE33551188EE( T(OTKOOK)O)
VBAT.5=2V.5t~o 41.05VV
100µμFF
1µμFF GRGMRM3311CCBB3311EE110066KKA7A57L5( ML(uMrautar)ata)
GGRRMM118888BB111A11A0150K5AK61A(6M1u(rMatau)rata)
11μµF
GGRRMM2211BBBB1111CC110055KKAA0011((MMuurraatata))
3.33~.55V.0Vto 10 V
Figure 1. Typical Application Circuit
Product structureSilicon monolithic integrated circuit
.www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
TSZ2211114001
This product has no designed protection against radioactive rays
1/21
TSZ02201-0Q3Q0NZ00350-1-2
17.Feb.2015 Rev.002

1 page




BD8311NUV pdf
BD8311NUV
Typical Performance Curves
(Unless otherwise specified, Ta = 25°C, VCC = 7.4V)
1.02
1.01
1.00
0.99
0.98
-40 -20 0 20 40 60 80 100 120
Temperature [°C]
Figure 4. INV Threshold vs Temperature
1.02
1.01
1.00
0.99
0.98
0
5 10 15
Power Supply Voltage: VCC [V]
Figure 5. INV Threshold vs VCC
5.3
5.2
5.1
5.0
4.9
4.8
4.7
-40
0 40 80
Temperature [°C]
120
Figure 6. VREG Voltage vs Temperature
8
7
6
5
4
3
2
1
0
0 2 4 6 8 10 12 14
Power Supply Voltage: VCC [V]
Figure 7. VREG vs Power Supply
voltage
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
TSZ2211115001
5/21
TSZ02201-0Q3Q0NZ00350-1-2
17.Feb.2015 Rev.002

5 Page





BD8311NUV arduino
BD8311NUV
3. Reference Application Data1 - continued
Frequency [Hz]
Figure 27. Frequency Response Property 1
(VCC = 3.5V, IO = 200mA)
Frequency [Hz]
Figure 28. Frequency Response Property 2
(VCC = 6.0V, IO = 200mA)
Frequency [Hz]
Figure 29. Frequency Response Property 3
(VCC = 8.4 V, IO = 200mA)
Frequency [Hz]
Figure 30. Frequency Response Property 4
(VCC = 3.5 V, IO = 500mA)
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
TSZ2211115001
11/21
TSZ02201-0Q3Q0NZ00350-1-2
17.Feb.2015 Rev.002

11 Page







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