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PDF LH28F320SKTD-ZR Data sheet ( Hoja de datos )
| Número de pieza | LH28F320SKTD-ZR | |
| Descripción | Flash Memory 32Mbit (2Mbitx8/1Mbitx16x2Bank) | |
| Fabricantes | Sharp Microelectronics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de LH28F320SKTD-ZR (archivo pdf) en la parte inferior de esta página. Total 30 Páginas | ||
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PRELIMINARY PRODUCT SPECIFICATION
Integrated Circwuwiwts.DaGtarSoheuept4U.com
LH28F320SKTD-ZR
Flash Memory
32Mbit
(2Mbitx8/1Mbitx16 x2Bank)
(Model Number: LHF32KZR)
Lead-free (Pb-free)
Spec. Issue Date: October 20, 2004
Spec No: EL16X177
1 page  
LHF32KZR
2
LH28F320SKTD-ZR
www.DataSheet4U.com
32M-BIT (2MBx8/1MBx16 x2Bank)
Smart3/5 Dual Work Flash MEMORY
■ Dual 16M-bit Banks Enable the
Simultaneous Read/Write/Erase
Operation
■ Smart3/5 Dual Work Technology
2.7V, 3.3V or 5V VCC
2.7V, 3.3V or 5V VPP
■ Common Flash Interface (CFI)
Universal & Upgradable Interface
■ Scalable Command Set (SCS)
■ High Speed Read Performance
70ns(5V±0.25V), 80ns(5V±0.5V),
100ns(3.3V±0.3V), 120ns(2.7V-3.6V)
■ Operating Temperature
0°C to +70°C
■ High Speed Write Performance
32 Bytes x 2 plane Page Buffer
2µs/Byte Write Transfer Rate
■ High-Density Symmetrically-Blocked
Architecture
Sixty-four 64K-byte Erasable Blocks
■ Extended Cycling Capability
100,000 Block Erase Cycles
3.2 Million Block Erase Cycles/Bank
■ SRAM-Compatible Write Interface
■ User-Configurable x8 or x16 Operation
■ Enhanced Automated Suspend Options
Write Suspend to Read
Block Erase Suspend to Write
Block Erase Suspend to Read
■ Enhanced Data Protection Features
Absolute Protection with VPP=GND
Flexible Block Locking
Erase/Write Lockout during Power
Transitions
■ Low Power Management
Deep Power-Down Mode
Automatic Power Savings Mode
Decreases ICC in Static Mode
■ Automated Write and Erase
Command User Interface
Status Register
■ Industry-Standard Packaging
56-Lead TSOP
■ ETOXTM* V Nonvolatile Flash
Technology
■ CMOS Process
(P-type silicon substrate)
■ Not designed or rated as radiation
hardened
SHARP’s LH28F320SKTD-ZR Dual Work Flash memory with Smart3/5 technology is a high-density, low-cost,
nonvolatile, read/write storage solution for a wide range of applications. Its symmetrically-blocked architecture,
flexible voltage and extended cycling provide for highly flexible component suitable for resident flash arrays, SIMMs
and memory cards. Its enhanced suspend capabilities provide for an ideal solution for code + data storage
applications. For secure code storage applications, such as networking, where code is either directly executed out
of flash or downloaded to DRAM, the LH28F320SKTD-ZR offers three levels of protection: absolute protection with
VPP at GND, selective hardware block locking, or flexible software block locking. These alternatives give designers
ultimate control of their code security needs.
The LH28F320SKTD-ZR is conformed to the flash Scalable Command Set (SCS) and the Common Flash Interface
(CFI) specification which enable universal and upgradable interface, enable the highest system/device data transfer
rates and minimize device and system-level implementation costs.
The LH28F320SKTD-ZR is manufactured on SHARP’s 0.4µm ETOXTM* V process technology. It come in industry-
standard package: the 56-Lead TSOP, ideal for board constrained applications.
*ETOX is a trademark of Intel Corporation.
5 Page 
LHF32KZR
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5 05FFFF
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4 04FFFF
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3 03FFFF
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2 02FFFF
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1 01FFFF
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0 00FFFF
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Figure 3. Memory Map
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11 Page | ||
| Páginas | Total 30 Páginas | |
| PDF Descargar | [ Datasheet LH28F320SKTD-ZR.PDF ] | |
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