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PDF LH28F320BFHE-PBTLEZ Data sheet ( Hoja de datos )
| Número de pieza | LH28F320BFHE-PBTLEZ | |
| Descripción | Flash Memory 32Mbit (2Mbitx16) | |
| Fabricantes | Sharp Microelectronics | |
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Hay una vista previa y un enlace de descarga de LH28F320BFHE-PBTLEZ (archivo pdf) en la parte inferior de esta página. Total 30 Páginas | ||
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PRODUCT SPECIFICATION
Integrated Circwuwiwts.DaGtarSoheuept4U.com
LH28F320BFHE-PBTLEZ
Flash Memory
32Mbit (2Mbitx16)
(Model Number: LHF32FEZ)
Spec. Issue Date: September 13, 2004
Spec No: EL169103
1 page  
LHF32FEZ
2
LH28F320BFHE-PBTLEZ
32Mbit (2Mbit×16)
Page Mode Dual Work Flash MEMORY
www.DataSheet4U.com
32M density with 16Bit I/O Interface
High Performance Reads
• 60/25ns 8-Word Page Mode
Configurative 4-Plane Dual Work
• Flexible Partitioning
• Read operations during Block Erase or (Page Buffer)
Program
• Status Register for Each Partition
Low Power Operation
• 2.7V Read and Write Operations
• Automatic Power Savings Mode Reduces ICCR
in Static Mode
Enhanced Code + Data Storage
• 5µs Typical Erase/Program Suspends
OTP (One Time Program) Block
• 4-Word Factory-Programmed Area
• 4-Word User-Programmable Area
High Performance Program with Page Buffer
• 16-Word Page Buffer
• 5µs/Word (Typ.) at 12V WP#/ACC
Operating Temperature -40°C to +85°C
CMOS Process (P-type silicon substrate)
Flexible Blocking Architecture
• Eight 4K-word Parameter Blocks
• Sixty-three 32K-word Main Blocks
• Bottom Parameter Location
Enhanced Data Protection Features
• Individual Block Lock and Block Lock-Down with
Zero-Latency
• All blocks are locked at power-up or device reset.
• Block Erase, Full Chip Erase, (Page Buffer) Word
Program Lockout during Power Transitions
Automated Erase/Program Algorithms
• 3.0V Low-Power 11µs/Word (Typ.)
Programming
• 12V No Glue Logic 9µs/Word (Typ.)
Production Programming and 0.5s Erase (Typ.)
Cross-Compatible Command Support
• Basic Command Set
• Common Flash Interface (CFI)
Extended Cycling Capability
• Minimum 100,000 Block Erase Cycles
48-Lead TSOP
ETOXTM* Flash Technology
Not designed or rated as radiation hardened
The product, which is 4-Plane Page Mode Dual Work (Simultaneous Read while Erase/Program) Flash memory, is a low
power, high density, low cost, nonvolatile read/write storage solution for a wide range of applications. The product can
operate at VCC=2.7V-3.6V. Its low voltage operation capability greatly extends battery life for portable applications.
The product provides high performance asynchronous page mode. It allows code execution directly from Flash, thus
eliminating time consuming wait states. Furthermore, its newly configurative partitioning architecture allows flexible dual
work operation.
The memory array block architecture utilizes Enhanced Data Protection features, and provides separate Parameter and Main
Blocks that provide maximum flexibility for safe nonvolatile code and data storage.
Fast program capability is provided through the use of high speed Page Buffer Program.
Special OTP (One Time Program) block provides an area to store permanent code such as a unique number.
* ETOX is a trademark of Intel Corporation.
Rev. 2.44
5 Page 
LHF32FEZ
8
www.DataSheet4U.com
[A20-A0]
000088H
Customer Programmable Area
000085H
000084H
Factory Programmed Area
000081H
000080H
Reserved for Future Implementation
(DQ15-DQ2)
Customer Programmable Area Lock Bit (DQ1)
Factory Programmed Area Lock Bit (DQ0)
Figure 3. OTP Block Address Map for OTP Program
(The area outside 80H~88H cannot be used.)
Rev. 2.44
11 Page | ||
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