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Número de pieza | UPDS3200 | |
Descripción | 3 Amp 200V High Voltage Schottky Barrier Rectifier | |
Fabricantes | Microsemi | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de UPDS3200 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
No Preview Available ! SCOTTSDALE DIVISION
UPDS3200
3 Amp 200 V High Voltage Schottky Barrier
Rectifier
www.DataSheet4U.com
DESCRIPTION
The UPDS3200 offers a small and powerful surface mount package for a
high voltage 200 Volt, 3 Amp rated Schottky with low forward voltage and
low leakage current. For critical applications requiring very fast switching,
these higher voltage Schottkys with their “hot carrier” features provide
extremely fast switching to replace conventional ultrafast rectifiers. The
very low thermal resistance of the PowerDI™5 package design also
permits cooler operating junction temperatures for minimal reverse leakage
currents and lower power loss.
APPEARANCE
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
PowerDI™5
FEATURES
• Guard Ring Die Construction for Transient Protection
• High Current Low Forward Voltage Drop
• Low Leakage Current
• High Junction Temperature Capability
• High Forward Surge Current Capability
• Environmentally Friendly “Green” Molding Compound
(No Br, Sb)
• Low inductive parasitics for minimal Ldi/dt effects
• Lead-Free Finish & RoHS Compliant per EU Directive
Rev 13.2.2003 (Glass and High Temperature Solder
Exemptions Applied per Annex Notes 5 and 7)
APPLICATIONS / BENEFITS
• Silicon Schottky (hot carrier) rectifier for minimal trr
and elimination of reverse-recovery oscillations to
reduce need for EMI filtering
• For use in high-frequency switching power
supplies, inverters, free wheeling, and polarity
protection applications
• Low power loss and high efficiency
• Robust package configuration for pick-and-place
handling
• Full-metallic bottom eliminates flux entrapment
MAXIMUM RATINGS
•
Junction
+150oC
and
Storage
Temperature
(TJ,
TSTG):
-65
to
• Average Rectified Output Current (IO): 3 Amps for
Single phase, half wave, 60Hz, resistive or inductive
load (also see Figure 5). For capacitive load, derate
current by 20%.
• Peak Repetitive Reverse Voltage (VRRM): 200 V
Working Peak Reverse Voltage (VRWM): 200 V
DC Blocking Voltage (VR): 200 V
• RMS Reverse Voltage (VR(RMS)): 141 V
• Non-Repetitive Peak Forward Surge Current @ 8.3 ms
Single half sine-wave Superimposed on Rated Load
(IFSM): 180A
• Thermal Resistance Junction to bottom of case (RθJC)
or Junction to Soldering Point (RθJS): 2.0oC/W
• Thermal Resistance (RθJA): 90oC/W junction to ambient
when mounted on FR-4 PCB, 2 oz. Copper and
minimum recommended pad layout (see last page)
MECHANICAL AND PACKAGING
• Case Material: Molded Plastic, Environmentally
Friendly “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
• Moisture sensitivity: Level 1 per J-STD-020C.
• Terminals: Finish – Matte Tin annealed over
Copper lead frame (
per JESD97)
Solderable per MIL-STD-202, Method 208
• Marking: See marking information on page 3
• Polarity: See Diagram
• Weight: 0.096 grams (approx.)
• Tape & Reel Option: 5000/reel (13”)
Copyright 2004
12-14-2004 REV 0
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet UPDS3200.PDF ] |
Número de pieza | Descripción | Fabricantes |
UPDS3200 | 3 Amp 200V High Voltage Schottky Barrier Rectifier | Microsemi |
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