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Número de pieza | PBSS301PD | |
Descripción | 4A PNP low VCEsat (BISS) transistor PNP low VCEsat Breakthrough | |
Fabricantes | NXP Semiconductors | |
Logotipo | ||
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20 V, 4 A PNP low VCEsat (BISS) transistor
Rev. 02 — 25 April 2005
Product data sheet
1. Product profile
1.1 General description
PNP low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT457 (SC-74) SMD
plastic package.
NPN complement: PBSS301ND.
1.2 Features
s Very low collector-emitter saturation resistance
s Ultra low collector-emitter saturation voltage
s 4 A continuous collector current
s Up to 15 A peak current
s High efficiency due to less heat generation
1.3 Applications
s Power management functions
s Charging circuits
s DC-to-DC conversion
s MOSFET gate driving
s Power switches (e.g. motors, fans)
s Thin Film Transistor (TFT) backlight inverter
1.4 Quick reference data
Table 1: Quick reference data
Symbol Parameter
Conditions
Min Typ Max
VCEO
IC
ICM
RCEsat
collector-emitter voltage open base
collector current (DC)
peak collector current
collector-emitter saturation
resistance
single pulse;
tp ≤ 1 ms
IC = −4 A;
IB = −400 mA
-
[1] -
-
[2] -
- −20
- −4
- −15
50 70
[1] Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint.
[2] Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
Unit
V
A
A
mΩ
1 page Philips Semiconductors
PBSS301PD
www.DataSheet4U.com
20 V, 4 A PNP low VCEsat (BISS) transistor
103
Zth(j-a)
(K/W)
102
10
1
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
(10)
006aaa272
10−1
10−5
10−4
10−3
10−2
10−1
1
10 102 103
tp (s)
FR4 PCB; mounting pad for collector 1 cm2
(1) δ = 1
(2) δ = 0.75
(3) δ = 0.5
(4) δ = 0.33
(5) δ = 0.2
(6) δ = 0.1
(7) δ = 0.05
(8) δ = 0.02
(9) δ = 0.01
(10) δ = 0
Fig 3. Transient thermal impedance from junction to ambient as a function of pulse time; typical values
9397 750 14959
Product data sheet
Rev. 02 — 25 April 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
5 of 16
5 Page Philips Semiconductors
8. Test information
PBSS301PD
www.DataSheet4U.com
20 V, 4 A PNP low VCEsat (BISS) transistor
−IB
90 %
10 %
−IC
90 %
−IBon (100 %)
input pulse
(idealized waveform)
− I Boff
output pulse
(idealized waveform)
−IC (100 %)
10 %
td tr
t on
Fig 13. BISS transistor switching time definition
ts
t off
t
tf
006aaa266
VBB
VCC
(probe)
oscilloscope
450 Ω
VI
RB
R2
R1
VCC = −12.5 V; IC = −3 A; IBon = −0.15 A; IBoff = 0.15 A
Fig 14. Test circuit for switching times
RC
Vo (probe)
oscilloscope
450 Ω
DUT
mgd624
9397 750 14959
Product data sheet
Rev. 02 — 25 April 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
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Páginas | Total 16 Páginas | |
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Número de pieza | Descripción | Fabricantes |
PBSS301PD | 4A PNP low VCEsat (BISS) transistor PNP low VCEsat Breakthrough | NXP Semiconductors |
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