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PDF FLL400IP-3 Data sheet ( Hoja de datos )
| Número de pieza | FLL400IP-3 | |
| Descripción | L-Band Medium & High Power GaAs FET | |
| Fabricantes | Eudyna Devices | |
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FLL400IP-3
L-Band Medium & High Power GaAs FET
FEATURES
• Push-Pull Configuration
• High Power Output: 35W (Typ.)
• High PAE: 43% (Typ.)
• Broad Frequency Range: 2300 to 2500 MHz.
• Suitable for class A operation at 10V
and class AB operation at 12V
DESCRIPTION
The FLL400IP-3 is a 35 Watt GaAs FET that employs a push-pull design that
offers ease of matching, greater consistency and a broader bandwidth for high
power S-band amplifiers. This product is targeted to reduce the size and
complexity of highly linear, high power base station transmitting amplifiers.
This new product is uniquely suited for use in Wireless Local Loop (WLL) base
station amplifiers as it offers high gain, long term reliability and ease of use.
www.DataSheet4U.com
Eudyna’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta=25°C)
Parameter
Symbol
Condition
Rating
Unit
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Total Power Dissipation
PT Tc = 25°C
Storage Temperature
Tstg
Channel Temperature
Tch
Eudyna recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 12 volts.
2. The forward and reverse gate currents should not exceed 54.4 and -17.4 mA respectively with
gate resistance of 25Ω.
3. The operating channel temperature (Tch) should not exceed 145°C.
15
-5
107
-65 to +175
+175
V
V
W
°C
°C
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Symbol
Conditions
Limits
Min. Typ. Max.
Drain Current
IDSS
VDS = 5V, VGS = 0V
- 12 16
Transconductance
gm VDS = 5V, IDS = 7.2A - 6000 -
Unit
A
mS
Pinch-Off Voltage
Vp VDS = 5V, IDS = 720mA
Gate-Source Breakdown Voltage VGSO IGS = -720µA
Output Power at 1 dB G.C.P.
Power Gain at 1 dB G.C.P.
Drain Current
Power-Added Efficiency
P1dB
G1dB
IDSR
ηadd
VDS = 12V
f = 2.5 GHz
IDS = 2A
Output Power at 1 dB G.C.P.
Power Gain at 1 dB G.C.P.
Thermal Resistance
P1dB
G1dB
Rth
VDS = 10V
f = 2.5 GHz
IDS = 5A (Note 1)
Channel to Case
CASE STYLE: IP
Note 1: The device shall be measured at a constant VGS condition.
-1.0
-5
44.5
8.0
-
-
-
-
-
-2.0 -3.5
V
--
45.5 -
9.0 -
6.0 8.0
V
dBm
dB
A
43 -
%
44.5 -
dBm
9.0 -
dB
1.0 1.4
°C/W
G.C.P.: Gain Compression Point
Edition 1.5
October 2004
1
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet FLL400IP-3.PDF ] | |
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