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PDF FLL400IK-2 Data sheet ( Hoja de datos )
| Número de pieza | FLL400IK-2 | |
| Descripción | High Voltage - High Power GaAs FET | |
| Fabricantes | Eudyna Devices | |
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FLL400IK-2
High Voltage - High Power GaAs FET
FEATURES
High Output Power: P1dB=46.5dBm(Typ.)
High Gain: G1dB=12.0dB(Typ.)
High PAE: ηadd=46%(Typ.)
Broad Band: 1.8~2.0GHz
Hermetically Sealed Package
DESCRIPTION
The FLL400IK-2 is a 40 Watt GaAs FET that is specially suited
for use in PHS base station amplifier as long term reliability.
Fujitsu’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Case Temperature Tc=25oC)
Item
Symbol
Rating
Drain-Source Voltage
VDS
15
Gate-Source Voltage
VGS
-5
Total Power Dissipation
PTot
93.7
Storage Temperature
Tstg
-65 to +175
Channel Temperature
Tch
175
Unit
V
V
W
oC
oC
RECOMMENDED OPERATING CONDITION (Case Temperature Tc=25oC)
Item
Symbol Condition
Limit
DC Input Voltage
Forward Gate Current
Reverse Gate Current
VDS
IGF
IGR
RG=10Ω
RG=10Ω
12
<54.4
>-17.4
Operating channel temperature Tch
145
Unit
V
mA
mA
oC
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25oC)
Item
Symbol Condition
Limit
Min. Typ. Max.
Transconductance
gm VDS=5V,IDS=8.0A
- 9.0 -
Pinch-off Voltage
Vp VDS=5V,IDS=1.08A
-1.0 -2.0 -3.5
Gate-Source Breakdown Voltage VGSO IGS=-1.08mA
-5.0 -
-
Output Power at 1dB G.C.P.
P1dB
45.5 46.5 -
Power Gain at 1dB G.C.P.
Drain Current
Power-added Efficiency
G1dB
Idsr
η add
VDD=12V
f=1.9GHz
IDS(DC)=4A
11.5
-
-
12.0
7.5
46.0
-
8.5
-
Thermal Resistance
Rth
- 1.3 1.6
Unit
S
V
V
dBm
dB
A
%
oC/W
Class III
2000 V~
Note : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.5kΩ)
CASE STYLE: IK
Edition 1.1
Augest 2004
1
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet FLL400IK-2.PDF ] | |
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