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PDF BCM857BV Data sheet ( Hoja de datos )
| Número de pieza | BCM857BV | |
| Descripción | PNP/PNP matched double transistors | |
| Fabricantes | NXP Semiconductors | |
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BCM857BV; BCM857BS; www.DataSheet4U.com
BCM857DS
PNP/PNP matched double transistors
Rev. 06 — 28 August 2009
Product data sheet
1. Product profile
1.1 General description
PNP/PNP matched double transistors in small Surface-Mounted Device (SMD) plastic
packages. The transistors are fully isolated internally.
Table 1. Product overview
Type number Package
NXP
BCM857BV
SOT666
BCM857BS
SOT363
BCM857DS
SOT457
JEITA
-
SC-88
SC-74
NPN/NPN
complement
BCM847BV
BCM847BS
BCM847DS
Matched version of
BC857BV
BC857BS
-
1.2 Features
I Current gain matching
I Base-emitter voltage matching
I Drop-in replacement for standard double transistors
1.3 Applications
I Current mirror
I Differential amplifier
1.4 Quick reference data
Table 2. Quick reference data
Symbol Parameter
Per transistor
VCEO
IC
hFE
collector-emitter voltage
collector current
DC current gain
Conditions
open base
VCE = −5 V;
IC = −2 mA
Min Typ Max Unit
- - −45 V
- - −100 mA
200 290 450
1 page  
NXP Semiconductors
BCM857BV/BS/DS
www.DataSheet4U.com
PNP/PNP matched double transistors
Table 8. Characteristics …continued
Tamb = 25 °C unless otherwise specified
Symbol
Parameter
Conditions
fT transition frequency VCE = −5 V;
IC = −10 mA;
f = 100 MHz
NF noise figure VCE = −5 V;
IC = −0.2 mA;
RS = 2 kΩ;
f = 10 Hz to
15.7 kHz
VCE = −5 V;
IC = −0.2 mA;
RS = 2 kΩ;
f = 1 kHz;
B = 200 Hz
Per device
hFE1/hFE2
hFE matching
VBE1−VBE2 VBE matching
VCE = −5 V;
IC = −2 mA
VCE = −5 V;
IC = −2 mA
Min Typ Max Unit
100 175 -
MHz
- 1.6 - dB
- 3.1 - dB
[3] 0.9
1
-
[4] - - 2 mV
[1] VBEsat decreases by about 1.7 mV/K with increasing temperature.
[2] VBE decreases by about 2 mV/K with increasing temperature.
[3] The smaller of the two values is taken as the numerator.
[4] The smaller of the two values is subtracted from the larger value.
BCM857BV_BS_DS_6
Product data sheet
Rev. 06 — 28 August 2009
© NXP B.V. 2009. All rights reserved.
5 of 15
5 Page 
NXP Semiconductors
BCM857BV/BS/DS
www.DataSheet4U.com
PNP/PNP matched double transistors
1.5
4.5 0.3 2.5
1.5
1.3 1.3
2.45
5.3
Fig 16. Wave soldering footprint SOT363 (SC-88)
3.45
1.95
0.95
3.30 2.825
0.45 0.55
1.60
1.70
3.10
3.20
msc422
Dimensions in mm
Fig 17. Reflow soldering footprint SOT457 (SC-74)
solder lands
solder resist
occupied area
Dimensions in mm
preferred transport
direction during soldering
sot363_fw
solder lands
solder resist
occupied area
solder paste
BCM857BV_BS_DS_6
Product data sheet
Rev. 06 — 28 August 2009
© NXP B.V. 2009. All rights reserved.
11 of 15
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| Páginas | Total 15 Páginas | |
| PDF Descargar | [ Datasheet BCM857BV.PDF ] | |
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