|
|
Número de pieza | BCM856BS | |
Descripción | PNP/PNP matched double transistors | |
Fabricantes | NXP Semiconductors | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de BCM856BS (archivo pdf) en la parte inferior de esta página. Total 14 Páginas | ||
No Preview Available ! BCM856BS; BCM856BS/DGwww.DataSheet4U.com
BCM856DS; BCM856DS/DG
PNP/PNP matched double transistors
Rev. 01 — 7 August 2008
Product data sheet
1. Product profile
1.1 General description
PNP/PNP matched double transistors in small Surface-Mounted Device (SMD) plastic
packages. The transistors are fully isolated internally.
Table 1. Product overview
Type number
Package
NXP
BCM856BS
SOT363
BCM856BS/DG
BCM856DS
SOT457
BCM856DS/DG
JEITA
SC-88
SC-74
Package configuration
very small
small
1.2 Features
I Current gain matching
I Base-emitter voltage matching
I Drop-in replacement for standard double transistors
I AEC-Q101 qualified
1.3 Applications
I Current mirror
I Differential amplifier
1.4 Quick reference data
Table 2. Quick reference data
Symbol Parameter
Per transistor
VCEO
IC
hFE
collector-emitter voltage
collector current
DC current gain
Conditions
open base
VCE = −5 V;
IC = −2 mA
Min Typ Max Unit
- - −65 V
- - −100 mA
200 290 450
1 page NXP Semiconductors
BCM856BS; BCM856DS
www.DataSheet4U.com
PNP/PNP matched double transistors
Table 8. Characteristics …continued
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
VBE
base-emitter voltage
VCE = −5 V;
IC = −2 mA
VCE = −5 V;
IC = −10 mA
Cc
collector capacitance
VCB = −10 V;
IE = ie = 0 A;
f = 1 MHz
Ce
emitter capacitance
VEB = −0.5 V;
IC = ic = 0 A;
f = 1 MHz
fT
transition frequency
VCE = −5 V;
IC = −10 mA;
f = 100 MHz
NF noise figure
VCE = −5 V;
IC = −0.2 mA;
RS = 2 kΩ;
f = 10 Hz to
15.7 kHz
VCE = −5 V;
IC = −0.2 mA;
RS = 2 kΩ;
f = 1 kHz;
B = 200 Hz
Per device
hFE1/hFE2 hFE matching
VBE1−VBE2 VBE matching
VCE = −5 V;
IC = −2 mA
VCE = −5 V;
IC = −2 mA
Min
[2] −600
[2] -
-
-
100
-
-
[3] 0.9
[4] -
[1] VBEsat decreases by about 1.7 mV/K with increasing temperature.
[2] VBE decreases by about 2 mV/K with increasing temperature.
[3] The smaller of the two values is taken as the numerator.
[4] The smaller of the two values is subtracted from the larger value.
Typ
−650
-
-
10
175
1.6
3.1
1
-
Max
−700
−760
2.2
-
-
-
-
-
2
Unit
mV
mV
pF
pF
MHz
dB
dB
mV
BCM856BS_BCM856DS_1
Product data sheet
Rev. 01 — 7 August 2008
© NXP B.V. 2008. All rights reserved.
5 of 14
5 Page NXP Semiconductors
BCM856BS; BCM856DS
www.DataSheet4U.com
PNP/PNP matched double transistors
1.475
5.05
1.475
5.3
1.5
(4×)
0.45
(2×)
1.45
(6×)
2.85
Fig 16. Wave soldering footprint SOT457 (SC-74)
solder lands
solder resist
occupied area
Dimensions in mm
preferred transport
direction during soldering
sot457_fw
BCM856BS_BCM856DS_1
Product data sheet
Rev. 01 — 7 August 2008
© NXP B.V. 2008. All rights reserved.
11 of 14
11 Page |
Páginas | Total 14 Páginas | |
PDF Descargar | [ Datasheet BCM856BS.PDF ] |
Número de pieza | Descripción | Fabricantes |
BCM856BS | PNP/PNP matched double transistors | NXP Semiconductors |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |