PDF BCM856BS Data sheet ( Hoja de datos )

Número de pieza	BCM856BS
Descripción	PNP/PNP matched double transistors
Fabricantes	NXP Semiconductors
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No Preview Available ! BCM856BS; BCM856BS/DGwww.DataSheet4U.com BCM856DS; BCM856DS/DG PNP/PNP matched double transistors Rev. 01 — 7 August 2008 Product data sheet 1. Product proﬁle 1.1 General description PNP/PNP matched double transistors in small Surface-Mounted Device (SMD) plastic packages. The transistors are fully isolated internally. Table 1. Product overview Type number Package NXP BCM856BS SOT363 BCM856BS/DG BCM856DS SOT457 BCM856DS/DG JEITA SC-88 SC-74 Package conﬁguration very small small 1.2 Features I Current gain matching I Base-emitter voltage matching I Drop-in replacement for standard double transistors I AEC-Q101 qualiﬁed 1.3 Applications I Current mirror I Differential ampliﬁer 1.4 Quick reference data Table 2. Quick reference data Symbol Parameter Per transistor VCEO IC hFE collector-emitter voltage collector current DC current gain Conditions open base VCE = −5 V; IC = −2 mA Min Typ Max Unit - - −65 V - - −100 mA 200 290 450 1 page NXP Semiconductors BCM856BS; BCM856DS www.DataSheet4U.com PNP/PNP matched double transistors Table 8. Characteristics …continued Tamb = 25 °C unless otherwise speciﬁed. Symbol Parameter Conditions VBE base-emitter voltage VCE = −5 V; IC = −2 mA VCE = −5 V; IC = −10 mA Cc collector capacitance VCB = −10 V; IE = ie = 0 A; f = 1 MHz Ce emitter capacitance VEB = −0.5 V; IC = ic = 0 A; f = 1 MHz fT transition frequency VCE = −5 V; IC = −10 mA; f = 100 MHz NF noise ﬁgure VCE = −5 V; IC = −0.2 mA; RS = 2 kΩ; f = 10 Hz to 15.7 kHz VCE = −5 V; IC = −0.2 mA; RS = 2 kΩ; f = 1 kHz; B = 200 Hz Per device hFE1/hFE2 hFE matching VBE1−VBE2 VBE matching VCE = −5 V; IC = −2 mA VCE = −5 V; IC = −2 mA Min [2] −600 [2] - - - 100 - - [3] 0.9 [4] - [1] VBEsat decreases by about 1.7 mV/K with increasing temperature. [2] VBE decreases by about 2 mV/K with increasing temperature. [3] The smaller of the two values is taken as the numerator. [4] The smaller of the two values is subtracted from the larger value. Typ −650 - - 10 175 1.6 3.1 1 - Max −700 −760 2.2 - - - - - 2 Unit mV mV pF pF MHz dB dB mV BCM856BS_BCM856DS_1 Product data sheet Rev. 01 — 7 August 2008 © NXP B.V. 2008. All rights reserved. 5 of 14 5 Page NXP Semiconductors BCM856BS; BCM856DS www.DataSheet4U.com PNP/PNP matched double transistors 1.475 5.05 1.475 5.3 1.5 (4×) 0.45 (2×) 1.45 (6×) 2.85 Fig 16. Wave soldering footprint SOT457 (SC-74) solder lands solder resist occupied area Dimensions in mm preferred transport direction during soldering sot457_fw BCM856BS_BCM856DS_1 Product data sheet Rev. 01 — 7 August 2008 © NXP B.V. 2008. All rights reserved. 11 of 14 11 Page

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