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PDF PBLS6002D Data sheet ( Hoja de datos )

Número de pieza PBLS6002D
Descripción 60V PNP BISS loadswitch
Fabricantes NXP Semiconductors 
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No Preview Available ! PBLS6002D Hoja de datos, Descripción, Manual

PBLS6002D
60 V PNP BISS loadswitch
Rev. 01 — 23 June 2005
www.DataSheet4U.com
Product data sheet
1. Product profile
1.1 General description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor and
NPN Resistor-Equipped Transistor (RET) in a SOT457 (SC-74) small Surface Mounted
Device (SMD) plastic package.
1.2 Features
s Low VCEsat (BISS) transistor and resistor-equipped transistor in one package
s Low threshold voltage (< 1 V) compared to MOSFET
s Low drive power required
s Space-saving solution
s Reduction of component count
1.3 Applications
s Supply line switches
s Battery charger switches
s High-side switches for LEDs, drivers and backlights
s Portable equipment
1.4 Quick reference data
Table 1: Quick reference data
Symbol Parameter
Conditions
Min Typ Max
TR1; PNP low VCEsat transistor
VCEO
collector-emitter voltage open base
IC collector current (DC)
RCEsat
collector-emitter saturation IC = 1 A;
resistance
IB = 100 mA
TR2; NPN resistor-equipped transistor
-
[1] -
[2] -
- 60
- 1
255 340
VCEO
IO
R1
collector-emitter voltage
output current (DC)
bias resistor 1 (input)
open base
- - 50
- - 100
3.3 4.7 6.1
R2/R1
bias resistor ratio
0.8 1
1.2
[1] Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint.
[2] Pulse test: tp 300 µs; δ ≤ 0.02.
Unit
V
A
m
V
mA
k

1 page




PBLS6002D pdf
Philips Semiconductors
PBLS6002D
www.DataSheet4U.com
60 V PNP BISS loadswitch
103
Zth(j-a)
δ=1
0.75
(K/W)
0.5
102
0.33
0.2
0.1
0.05
10 0.02
0.01
0
1
006aaa462
101
105
104
103
102
101
1
10 102 103
tp (s)
FR4 PCB, standard footprint
Fig 2. TR1 (PNP): Transient thermal impedance from junction to ambient as a function of pulse time;
typical values
103
Zth(j-a)
(K/W)
102
δ=1
0.75
0.5
0.33
0.2
0.1
0.05
10 0.02
0.01
006aaa463
0
1
105
104
103
102
101
1
10 102 103
tp (s)
FR4 PCB, mounting pad for collector 1 cm2
Fig 3. TR1 (PNP): Transient thermal impedance from junction to ambient as a function of pulse time;
typical values
9397 750 15197
Product data sheet
Rev. 01 — 23 June 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
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PBLS6002D arduino
Philips Semiconductors
8. Test information
PBLS6002D
www.DataSheet4U.com
60 V PNP BISS loadswitch
IB
90 %
10 %
IC
90 %
IBon (100 %)
input pulse
(idealized waveform)
I Boff
output pulse
(idealized waveform)
IC (100 %)
10 %
td tr
t on
Fig 17. BISS transistor switching time definition
ts
t off
t
tf
006aaa266
VBB
VCC
(probe)
oscilloscope
450
VI
RB
R2
R1
RC
Vo (probe)
oscilloscope
450
DUT
mgd624
IC = 0.5 A; IBon = 25 mA; IBoff = 25 mA; R1 = open; R2 = 100 ; RB = 300 ; RC = 20
Fig 18. Test circuit for switching times
9397 750 15197
Product data sheet
Rev. 01 — 23 June 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
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