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Número de pieza | PBSS5220V | |
Descripción | 2A PNP low VCEsat (BISS) transistor | |
Fabricantes | NXP Semiconductors | |
Logotipo | ||
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20 V, 2 A PNP low VCEsat (BISS) transistor
Rev. 01 — 13 June 2005
Product data sheet
1. Product profile
1.1 General description
PNP low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT666 Surface
Mounted Device (SMD) plastic package.
1.2 Features
s Low collector-emitter saturation voltage VCEsat
s High collector current capability: IC and ICM
s High collector current gain (hFE) at high IC
s High efficiency due to less heat generation
s Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
s DC-to-DC conversion
s MOSFET gate driving
s Motor control
s Charging circuits
s Low power switches (e.g. motors, fans)
s Portable applications
1.4 Quick reference data
Table 1: Quick reference data
Symbol Parameter
VCEO collector-emitter voltage
IC collector current (DC)
ICM peak collector current
RCEsat collector-emitter
saturation resistance
Conditions
open base
tp ≤ 300 µs
IC = −1 A;
IB = −100 mA
Min Typ Max
- - −20
- - −2
- - −4
- 140 210
Unit
V
A
A
mΩ
1 page Philips Semiconductors
PBSS5220V
www.DataSheet4U.
20 V, 2 A PNP low VCEsat (BISS) transistor
7. Characteristics
Table 7: Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
ICBO
ICES
collector-base cut-off
current
collector-emitter cut-off
current
VCB = −20 V; IE = 0 A
VCB = −20 V; IE = 0 A;
Tj = 150 °C
VCE = −20 V; VBE = 0 V
IEBO emitter-base cut-off VEB = −5 V; IC = 0 A
current
hFE DC current gain
VCEsat collector-emitter
saturation voltage
RCEsat collector-emitter
saturation resistance
VCE = −2 V; IC = −1 mA
VCE = −2 V; IC = −100 mA
VCE = −2 V; IC = −500 mA
VCE = −2 V; IC = −1 A
VCE = −2 V; IC = −2 A
IC = −100 mA; IB = −1 mA
IC = −500 mA; IB = −50 mA
IC = −1 A; IB = −50 mA
IC = −1 A; IB = −100 mA
IC = −2 A; IB = −100 mA
IC = −2 A; IB = −200 mA
IC = −1 A; IB = −100 mA
VBEsat
VBEon
base-emitter saturation
voltage
base-emitter turn-on
voltage
IC = −1 A; IB = −50 mA
IC = −1 A; IB = −100 mA
VCE = −5 V; IC = −1 A
td delay time
tr rise time
IC = −1 A; IBon = −50 mA;
IBoff = 50 mA
ton turn-on time
ts storage time
tf fall time
toff turn-off time
fT
transition frequency
VCE = −10 V; IC = −50 mA;
f = 100 MHz
Cc collector capacitance VCB = −10 V; IE = ie = 0 A;
f = 1 MHz
Min
-
-
-
-
220
220
[1] 220
[1] 155
[1] 60
-
[1] -
[1] -
[1] -
[1] -
[1] -
[1] -
[1] -
[1] -
-
-
-
-
-
-
-
150
-
[1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
Typ Max Unit
- −0.1 µA
- −50 µA
- −0.1 µA
- −0.1 µA
495
440
310
220
120
−50
−75
−155
−140
−305
−265
140
-
-
-
-
-
−80
−115
−220
−210
−455
−390
210
mV
mV
mV
mV
mV
mV
mΩ
−0.95 −1.1
−1 −1.1
−0.8 −1
V
V
V
8-
34 -
42 -
140 -
45 -
185 -
185 -
ns
ns
ns
ns
ns
ns
MHz
15 20 pF
9397 750 14936
Product data sheet
Rev. 01 — 13 June 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
5 of 13
5 Page Philips Semiconductors
PBSS5220V
www.DataSheet4U.com
20 V, 2 A PNP low VCEsat (BISS) transistor
12. Revision history
Table 9: Revision history
Document ID
Release date Data sheet status
PBSS5220V_1
20050613
Product data sheet
Change notice Doc. number Supersedes
- 9397 750 14936 -
9397 750 14936
Product data sheet
Rev. 01 — 13 June 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
11 of 13
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Páginas | Total 13 Páginas | |
PDF Descargar | [ Datasheet PBSS5220V.PDF ] |
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