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PDF IRF2907ZS-7PPbF Data sheet ( Hoja de datos )
| Número de pieza | IRF2907ZS-7PPbF | |
| Descripción | HEXFET Power MOSFET | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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PD -w9w7w0.3D1ataSheet4U.com
IRF2907ZS-7PPbF
Features
l Advanced Process Technology
HEXFET® Power MOSFET
l Ultra Low On-Resistance
l 175°C Operating Temperature
D VDSS = 75V
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
G
RDS(on) = 3.8mΩ
Description
Specifically designed for high current, high reliabil-
ity applications, this HEXFET® Power MOSFET
utilizes the latest processing techniques and ad-
vanced packaging technology to achieve extremely
low on-resistance and world -class current ratings.
Additional features of this design are a 175°C
junction operating temperature, fast switching speed
and improved repetitive avalanche rating . These
features combine to make this design an extremely
efficient and reliable device for use in Server &
Telecom OR'ing, Automotive and low voltage Motor
Drive Applications.
S
S (Pin 2, 3, 5, 6, 7)
G (Pin 1)
ID = 160A
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (See Fig. 9)
Continuous Drain Current, VGS @ 10V (Package Limited)
cPulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
VGS
EAS
EAS (tested)
IAR
EAR
Gate-to-Source Voltage
dSingle Pulse Avalanche Energy (Thermally Limited)
hSingle Pulse Avalanche Energy Tested Value
cAvalanche Current
gRepetitive Avalanche Energy
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Thermal Resistance
RθJC
RθCS
RθJA
RθJA
Parameter
jJunction-to-Case
Case-to-Sink, Flat, Greased Surface
jJunction-to-Ambient
ijJunction-to-Ambient (PCB Mount, steady state)
HEXFET® is a registered trademark of International Rectifier.
www.irf.com
Max.
180
120
160
700
300
2.0
± 20
160
410
See Fig.12a,12b,15,16
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Typ.
–––
0.50
–––
–––
Max.
0.50
–––
62
40
Units
A
W
W/°C
V
mJ
A
mJ
°C
Units
°C/W
1
08/03/05
1 page  
IRF2907ZS-7PPwwbw.FDataSheet4U.com
200
Limited By Package
160
120
80
40
0
25
50 75 100 125 150
TC , Case Temperature (°C)
175
Fig 9. Maximum Drain Current vs.
Case Temperature
3.0
ID = 180A
VGS = 10V
2.5
2.0
1.5
1.0
0.5
-60 -40 -20 0 20 40 60 80 100120140160180
TJ , Junction Temperature (°C)
Fig 10. Normalized On-Resistance
vs. Temperature
1
D = 0.50
0.1
0.01
0.001
0.0001
1E-006
0.20
0.10
0.05
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
τJ τJ
τ1 τ1
R1R1
CiC= iτi/Ri/iRi
R2R2
τ2 τ2
R3R3 Ri (°C/W) τi (sec)
τCτ 0.1072 0.000896
τ3τ3 0.2787 0.009380
0.1143 0.121118
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-005
0.0001
0.001
t1 , Rectangular Pulse Duration (sec)
0.01
0.1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
5
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| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet IRF2907ZS-7PPbF.PDF ] | |
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