(PDF) BAT854W Datasheet - Schottky barrier (double) diodes

Número de pieza	BAT854W
Descripción	Schottky barrier (double) diodes
Fabricantes	Guangdong Kexin Industrial
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No Preview Available ! SMD Type Schottky barrier (double) diodes BAT854W;BAT854AW BAT854CW;BAT854SW Diodesw w w . D a t a S h e Features Very low forward voltage Very low reverse current Guard ring protected Very small SMD package. Absolute Maximum Ratings Ta = 25 Parameter Continuous reverse voltage Continuous forward current Repetitive peak forward current Non-repetitive peak forward current Storage temperature Junction temperature Operating ambient temperature Thermal resistance from junction to ambient Symbol VR IF IFRM IFSM Tstg Tj Tamb Rth j-a Conditions tp 1 s; d 0.5 t = 8.3 ms half sinewave;JEDEC method Min -65 -65 Max 40 200 300 1 +150 150 +150 625 Unit V mA mA A K/W Electrical Characteristics Ta = 25 Parameter Symbol Forward voltage VF Continuous reverse current Diode capacitance Note 1. Pulse test: tp 300 s; ä 0.02. IR Cd Conditions IF = 0.1 mA IF = 1 mA IF = 10 mA IF = 30 mA IF = 100 mA VR = 25 V; Note 1 f = 1 MHz; VR = 1 V Typ Max Unit 200 260 340 mV 420 550 0.5 A 20 pF Marking Type Marking BTA854W 81 BAT854AW 82 BAT854CW 83 BAT854SW 84 www.kexin.com.cn 1 1 page

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