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PDF IRG4P254S Data sheet ( Hoja de datos )
| Número de pieza | IRG4P254S | |
| Descripción | INSULATED GATE BIPOLAR TRANSISOR | |
| Fabricantes | International Rectifier | |
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PD -91591A
IRG4P254S
INSULATED GATE BIPOLAR TRANSISTOR
Standard Speed IGBT
Features
• Standard: Optimized for minimum saturation
voltage and operating frequencies up to 10kHz
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
• Industry standard TO-247AC package
C
G
E
n-channel
VCES = 250V
VCE(on) typ. = 1.32V
@VGE = 15V, IC = 55A
Benefits
• Generation 4 IGBT's offer highest efficiency available
• IGBT's optimized for specified application conditions
• High Power density
• Lower conduction losses than similarly rated MOSFET
• Lower Gate Charge than equivalent MOSFET
• Simple Gate Drive characteristics compared to Thyristors
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
EARV
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Q
Clamped Inductive Load Current R
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy S
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Thermal Resistance
RθJC
RθCS
RθJA
Wt
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
* Package limited to 70A
www.irf.com
TO-247AC
Max.
250
98*
55
196
196
± 20
160
200
78
-55 to + 150
300 (0.063 in. (1.6mm) from case )
10 lbf•in (1.1N•m)
Units
V
A
V
mJ
W
°C
Typ.
–––
0.24
–––
6.0 (0.21)
Max.
0.64
–––
40
–––
Units
°C/W
g (oz)
1
4/15/2000
1 page  
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8000
6000
4000
VGE = 0V, f = 1MHz
Cies = Cge + Cgc , Cce SHORTED
Cres = Cgc
Coes = Cce + Cgc
Cies
2000
0
1
Coes
Cres
10 100
VCE , Collector-to-Emitter Voltage (V)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
IRG4P254S
20
VCC = 200V
I C = 55A
16
12
8
4
0
0 40 80 120 160 200
QG, Total Gate Charge (nC)
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
5.0
VCC = 200V
VGE = 15V
TJ = 25 ° C
IC = 55A
4.0
100 RG = 55O.0hΩm
VGE = 15V
VCC = 200V
10
1
IC = 110 A
IC = 55 A
IC =27.5 A
3.0
0
10 20 30 40
RRRGGG,,,GGGaaatteteeRRReesesissistitasantnaccneec(e(ΩΩ(O)) hm)
50
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
www.irf.com
0.1
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature ( °C )
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRG4P254S.PDF ] | |
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