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PDF KMA5D8DP20Q Data sheet ( Hoja de datos )
| Número de pieza | KMA5D8DP20Q | |
| Descripción | Dual P-CH Trench MOSFET | |
| Fabricantes | KEC | |
| Logotipo |  |
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SEMICONDUCTOR
TECHNICAL DATA
General Description
Battery Packs and Battery-powered portable equipment applications.
It’s mainly suitable for use as a load switch in battery powered applications
and protection in battery packs.
FEATURES
VDSS=-20V, ID=-5.8A.
Drain-Source ON Resistance.
: RDS(ON)=36m (Max.) @ VGS=-4.5V.
: RDS(ON)=62m (Max.) @ VGS=-2.5V.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Drain-Source Voltage
Gate-Source Voltage
VDSS
VGSS
-20
12
Drain Current
DC
Pulsed (Note2)
ID *
IDP
-5.8
-24
Ta=25
Drain Power Dissipation
Ta=100
2.0
PD *
0.8
Maximum Junction Temperature
Storage Temperature Range
Tj 150
Tstg -55 150
Thermal Resistance, Junction to Ambient RthJA *
62.5
* : Surface Mounted on 1 1 Board, t 10sec.
UNIT
V
V
A
W
/W
KMA5D8DP20Q
Dual P-CH Trench MOSFET
www.DataSheet4U.com
DP
H
T
G
L
A
DIM MILLIMETERS
A 4.9+_ 0.1
B 6.0+_ 0.2
85
B1 3.9+_ 0.1
D 0.445 +_ 0.065
B1 B
G 0.175+_ 0.075
H 1.55+_ 0.2
14
L 0.715+_ 0.215
P 1.27 BSC
T 0.254
FLP-8
PIN CONNECTION (TOP VIEW)
D1 D1
S1 1
G1 2
S2 3
G2 4
8 D1
7 D1
6 D2
5 D2
G1
S1
D2 D2
G2
S2
2006. 2. 23
Revision No : 2
1/5
1 page  
KMA5D8DP20Q
www.DataSheet4U.com
Fig. 1 Gate Charge
Schottky
ID Diode
0.5 VDSS
1.0 mA
VGS
ID
VDS
VGS
-4.5 V
Qgs Qgd
Qg
Q
Fig. 2 Resistive Load Switching
0.5 VDSS
6Ω
-4.5 V
VGS
RL
VDS
td(on)
VGS
10%
ton
tr
VDS 90%
td(off)
toff
tf
2006. 2. 23
Revision No : 2
5/5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet KMA5D8DP20Q.PDF ] | |
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