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PDF PBSS303PD Data sheet ( Hoja de datos )
| Número de pieza | PBSS303PD | |
| Descripción | 3 A PNP low VCEsat (BISS) transistor | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
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PBSS303PD
60 V, 3 A PNP low VCEsat (BISS) transistor
Rev. 01 — 31 May 2006
www.DataSheet4U.com
Product data sheet
1. Product profile
1.1 General description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74)
small Surface-Mounted Device (SMD) plastic package.
NPN complement: PBSS303ND.
1.2 Features
I Low collector-emitter saturation voltage VCEsat
I High collector current capability IC and ICM
I High collector current gain (hFE) at high IC
I High efficiency due to less heat generation
I Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
I High-voltage DC-to-DC conversion
I High-voltage MOSFET gate driving
I High-voltage motor control
I High-voltage power switches (e.g. motors, fans)
I Thin Film Transistor (TFT) backlight inverter
I Automotive applications
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
VCEO
IC
ICM
collector-emitter voltage
collector current
peak collector current
RCEsat collector-emitter
saturation resistance
Conditions
open base
single pulse;
tp ≤ 1 ms
IC = −2 A;
IB = −200 mA
Min Typ Max
- - −60
[1] - - −3
- - −6
[2] -
75 100
[1] Device mounted on a ceramic PCB, Al2O3, standard footprint.
[2] Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
Unit
V
A
A
mΩ
1 page  
Philips Semiconductors
www.DataSheet4U.com
PBSS303PD
60 V, 3 A PNP low VCEsat (BISS) transistor
103
Zth(j-a)
(K/W)
102
10
duty cycle =
1
0.75
0.5
0.33
0.2
0.1
0.05
0.02
0.01
10
006aaa271
10−1
10−5
10−4
10−3
10−2
10−1
1
10 102 103
tp (s)
FR4 PCB, standard footprint
Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
103
Zth(j-a)
(K/W)
102
10
duty cycle =
1
0.75
0.5
0.33
0.2
0.1
0.05
0.02
0.01
1
0
006aaa272
10−1
10−5
10−4
10−3
10−2
10−1
1
10 102 103
tp (s)
FR4 PCB, mounting pad for collector 1 cm2
Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PBSS303PD_1
Product data sheet
Rev. 01 — 31 May 2006
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
5 of 16
5 Page 
Philips Semiconductors
8. Test information
www.DataSheet4U.com
PBSS303PD
60 V, 3 A PNP low VCEsat (BISS) transistor
−IB
90 %
10 %
−IC
90 %
−IBon (100 %)
input pulse
(idealized waveform)
− I Boff
output pulse
(idealized waveform)
−IC (100 %)
10 %
td tr
t on
Fig 14. BISS transistor switching time definition
ts
t off
t
tf
006aaa266
VBB
VCC
(probe)
oscilloscope
450 Ω
VI
RB
R2
R1
RC
Vo (probe)
oscilloscope
450 Ω
DUT
VCC = −9.2 V; IC = −2 A; IBon = −0.1 A; IBoff = 0.1 A
Fig 15. Test circuit for switching times
mgd624
PBSS303PD_1
Product data sheet
Rev. 01 — 31 May 2006
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
11 of 16
11 Page | ||
| Páginas | Total 16 Páginas | |
| PDF Descargar | [ Datasheet PBSS303PD.PDF ] | |
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