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PDF TDF8590TH Data sheet ( Hoja de datos )
| Número de pieza | TDF8590TH | |
| Descripción | 2 x 80 W SE or 1 x 160 W BTL class-D amplifer | |
| Fabricantes | NXP Semiconductors | |
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TDF8590TH
2 × 80 W SE (4 Ω) or 1 × 160 W BTL (8 Ω) class-D amplifier
Rev. 01 — 13 June 2006
Preliminary data sheet
1. General description
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The TDF8590TH is a high efficiency class-D audio power amplifier with low power
dissipation for application in car audio systems. The typical output power is 2 × 80 W
into 4 Ω.
The TDF8590TH is available in a HSOP24 power package with a small internal heat sink.
Depending on the supply voltage and load conditions, a small or even no external heat
sink is required. The amplifier operates over a wide supply voltage range from ±14 V to
±29 V and consumes a low quiescent current.
2. Features
I Zero dead time switching
I Advanced output current protection
I No DC offset induced pop noise at mode transitions
I High efficiency
I Supply voltage from ±14 V to ±29 V
I Low quiescent current
I Usable as a stereo Single-Ended (SE) amplifier or as a mono amplifier in Bridge-Tied
Load (BTL)
I Fixed gain of 26 dB in SE and 32 dB in BTL
I High output power: 160 W into 8 Ω, 80 W into 4 Ω
I Suitable for speakers in the range of 2 Ω to 8 Ω
I High supply voltage ripple rejection
I Internal oscillator or synchronized to an external clock
I Full short-circuit proof outputs across load and to supply lines
I Thermal foldback and thermal protection
3. Ordering information
Table 1. Ordering information
Type number
Package
Name
Description
TDF8590TH
HSOP24
plastic, heatsink small outline package; 24 leads;
low stand-off height
Version
SOT566-3
1 page  
Philips Semiconductors
TDF8590TH
2 × 80 W SE (4 Ω) or 1 × 160 W BTL (8 Ω) class-D amplifier
The value of the RC time constant should be dimensioned for 500 ms. If the 100 µF
capacitor is left out of the application the voltage on pin MODE will be applied with a much
smaller time constant, which might result in audible pop noises during start-up (depending
on DC output offset voltage and used loudspeaker).
In order to fully charge the coupling capacitors at the inputs, the amplifier will remain
automatically in Mute mode for approximately 150 ms before switching to Operating
mode. A complete overview of the start-up timing is given in Figure 4.
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Vmode
5V
2.5 V
mute
standby
0 V (SGND)
100 ms
>50 ms
audio
switching
operating
time
Vmode
5V
audio
switching
operating
standby
0 V (SGND)
100 ms
Fig 4. Timing on mode selection input
50 ms
time
001aad837
6.3 Pulse width modulation frequency
The output signal of the amplifier is a PWM signal with a switching frequency that is set by
an external resistor Rext(OSC) connected between pins OSC and VSSA. An optimum setting
for the carrier frequency is between 300 kHz and 350 kHz. An external resistor Rext(OSC) of
30 kΩ sets the frequency to 310 kHz.
TDF8590TH_1
Preliminary data sheet
Rev. 01 — 13 June 2006
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
5 of 30
5 Page 
Philips Semiconductors
TDF8590TH
2 × 80 W SE (4 Ω) or 1 × 160 W BTL (8 Ω) class-D amplifier
Table 5. Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VIN1P
VIN2M
VIN2P
VDIAG
VO
voltage on pin IN1P
voltage on pin IN2M
voltage on pin IN2P
voltage on pin DIAG
output voltage
referred to SGND1
referred to SGND2
referred to SGND2
referred to VSSD
Min
−5
−5
−5
[3] 0
VSSP −
0.3
Max
+5
+5
+5
9
VDDP +
0.3
Unit
V
V
V
V
V
[1] Pin BOOT should not be loaded by any other means than the boot capacitor. Shorting pin BOOT to VSS will damage the device.
[2] Pin STABI should not be loaded by an external circuit. Shorting pin STABI to a voltage source or VSS will damage the device.
w w w[3]. DPian Dt IaAGSshhoeuldentot4bUe c.ocnnoecmted to a voltage source or to a pull-up resistor. An example of a circuit that can be used to read out
diagnostic data is given in Figure 7.
8. Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter
Conditions
Rth(j-c)
Rth(j-a)
thermal resistance from junction to case
thermal resistance from junction to ambient in free air
Typ Unit
1.1 K/W
35 K/W
9. Static characteristics
Table 7. Static characteristics
VP = ±27 V; fosc = 310 kHz; Tamb = −40 °C to +85 °C; Tj = −40 °C to +150 °C; unless otherwise specified.
Symbol
Parameter
Conditions
Min Typ
Max
Supply
VP
Iq(tot)
supply voltage
total quiescent current
no load, no filter, no snubber
network connected
[1] ±14
-
±27
50
±29
65
Istb standby current
Tj = −40 °C to +85 °C
Mode select input; pin MODE (reference to SGND2)
- 150 500
IMODE
VMODE
current on pin MODE
voltage on pin mode
VMODE = 5.5 V
Standby mode
Mute mode
-
[2][3] 0
[2][3] 2.2
100
-
-
300
0.8
2.8
Operating mode
[2][3] 4.2
-
6
Diagnostic output; pin DIAG (reference to VSSD)
VOL LOW-level output voltage activated OCP or WP
[4] -
-
VOH HIGH-level output voltage no activated OCP or WP
[4] -
8.4
Audio inputs; pins IN1M, IN1P (reference to SGND1), IN2P and IN2M (reference to SGND2)
0.8
9
VI input voltage
[2] -
0
-
Unit
V
mA
µA
µA
V
V
V
V
V
V
TDF8590TH_1
Preliminary data sheet
Rev. 01 — 13 June 2006
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
11 of 30
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