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PDF K4T1G084QE Data sheet ( Hoja de datos )

Número de pieza K4T1G084QE
Descripción 1Gb E-die DDR2 SDRAM
Fabricantes Samsung Electronics 
Logotipo Samsung Electronics Logotipo



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K4T1G044QE
K4T1G084QE
K4T1G164QE
DDR2 SDRAM
1Gb E-die DDR2 SDRAM Specification
60FBGA & 84FBGA with Lead-Free & Halogen-Free
www.DataSheet4U.com
(RoHS compliant)
INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,
AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE
CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHER-
WISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOL-
OGY. ALL INFORMATION IN THIS DOCUMENT IS PROVIDED ON AS "AS IS" BASIS WITHOUT
GUARANTEE OR WARRANTY OF ANY KIND.
1. For updates or additional information about Samsung products, contact your nearest Samsung office.
2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar
applications where Product failure could result in loss of life or personal or physical harm, or any military or
defense application, or any governmental procurement to which special terms or provisions may apply.
* Samsung Electronics reserves the right to change products or specification without notice.
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Rev. 1.1 December 2008

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K4T1G084QE pdf
K4T1G044QE
K4T1G084QE
K4T1G164QE
3.0 Package Pinout/Mechanical Dimension & Addressing
3.1 x4 package pinout (Top View) : 60ball FBGA Package
1 2 3 456 7 8 9
DDR2 SDRAM
A
B
C
D
E
F
G
H
www.DataSheet4U.comJ
K
L
VDD
NC
VDDQ
NC
VDDL
BA2
VSS
VDD
NC
VSSQ
DQ1
VSSQ
VREF
CKE
BA0
A10/AP
A3
A7
A12
VSS
DM
VDDQ
DQ3
VSS
WE
BA1
A1
A5
A9
NC
VSSQ
DQS
VDDQ
DQ2
VSSDL
RAS
CAS
A2
A6
A11
NC
DQS
VSSQ
DQ0
VSSQ
CK
CK
CS
A0
A4
A8
A13
VDDQ
NC
VDDQ
NC
VDD
ODT0
VDD
VSS
Note : VDDL and VSSDL are power and ground for the DLL. It is recommended that they be isolated on the device from VDD,VD-
DQ, VSS, and VSSQ.
Ball Locations (x4)
Populated ball
Ball not populated
Top view
(See the balls through package)
123456789
A
B
C
D
E
F
G
H
J
K
L
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Rev. 1.1 December 2008

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K4T1G084QE arduino
K4T1G044QE
K4T1G084QE
K4T1G164QE
5.0 DDR2 SDRAM Addressing
1Gb Addressing
Configuration
256Mb x4
128Mb x 8
# of Bank 8 8
Bank Address
BA0 ~ BA2
BA0 ~ BA2
Auto precharge
A10/AP
A10/AP
Row Address
A0 ~ A13
A0 ~ A13
Column Address
A0 ~ A9,A11
A0 ~ A9
* Reference information: The following tables are address mapping information for other densities.
256Mb
Configuration
# of Bank
Bank Address
Auto precharge
www.DataSheet4U.com
Row Address
Column Address
64Mb x4
4
BA0,BA1
A10/AP
A0 ~ A12
A0 ~ A9,A11
32Mb x 8
4
BA0,BA1
A10/AP
A0 ~ A12
A0 ~ A9
512Mb
Configuration
# of Bank
Bank Address
Auto precharge
Row Address
Column Address
128Mb x4
4
BA0,BA1
A10/AP
A0 ~ A13
A0 ~ A9,A11
64Mb x 8
4
BA0,BA1
A10/AP
A0 ~ A13
A0 ~ A9
2Gb
Configuration
# of Bank
Bank Address
Auto precharge
Row Address
Column Address
512Mb x4
8
BA0 ~ BA2
A10/AP
A0 ~ A14
A0 ~ A9,A11
256Mb x 8
8
BA0 ~ BA2
A10/AP
A0 ~ A14
A0 ~ A9
4Gb
Configuration
# of Bank
Bank Address
Auto precharge
Row Address
Column Address
1 Gb x4
8
BA0 ~ BA2
A10/AP
A0 - A15
A0 - A9,A11
512Mb x 8
8
BA0 ~ BA2
A10/AP
A0 - A15
A0 - A9
DDR2 SDRAM
64Mb x16
8
BA0 ~ BA2
A10/AP
A0 ~ A12
A0 ~ A9
16Mb x16
4
BA0,BA1
A10/AP
A0 ~ A12
A0 ~ A8
32Mb x16
4
BA0,BA1
A10/AP
A0 ~ A12
A0 ~ A9
128Mb x16
8
BA0 ~ BA2
A10/AP
A0 ~ A13
A0 ~ A9
256Mb x16
8
BA0 ~ BA2
A10/AP
A0 - A14
A0 - A9
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Rev. 1.1 December 2008

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