DataSheet.es    


PDF FQP11N50CF Data sheet ( Hoja de datos )

Número de pieza FQP11N50CF
Descripción 500V N-Channel MOSFET
Fabricantes Fairchild Semiconductor 
Logotipo Fairchild Semiconductor Logotipo



Hay una vista previa y un enlace de descarga de FQP11N50CF (archivo pdf) en la parte inferior de esta página.


Total 10 Páginas

No Preview Available ! FQP11N50CF Hoja de datos, Descripción, Manual

July 2005
FRFET TM
FQP11N50CF/FQPF11N50CF
500V N-Channel MOSFET
Features
• 11A, 500V, RDS(on) = 0.55@VGS = 10 V
• Low Gate Charge (typical 43 nC)
• Low Crss (typical 20pF)
• Fast Switching
• 100% Avalanche Tested
www.DataSheImetp4rUov.ceodmdv/dt Capability
• Fast Recovery Body Diode (typical 90ns)
Description
These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advanced technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi-
ciency switched mode power supplies, active power factor cor-
rection, electronic lamp ballasts based on half bridge topology.
GDS
TO-220
FQP Series
GD S
Absolute Maximum Ratings
Symbol
Parameter
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
PD Power Dissipation (TC = 25°C)
- Derate above 25°C
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
* Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
Parameter
RθJC
RθJS
RθJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
TO-220F
FQPF Series
D
{
G{
◀▲
{
S
FQP11N50CF FQPF11N50CF
500
11 11 *
7 7*
44 44 *
± 30
670
11
19.5
4.5
195 48
1.56 0.39
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
FQP11N50CF
0.64
0.5
62.5
FQPF11N50CF
2.58
--
62.5
Units
°C/W
°C/W
°C/W
©2005 Fairchild Semiconductor Corporation
FQP11N50CF/FQPF11N50CF Rev. A
1
www.fairchildsemi.com

1 page




FQP11N50CF pdf
Typical Performance Characteristics (Continued)
Figure 11-1. Transient Thermal Response Curve for FQP11N50CF
www.DataSheet4U.com
100
D = 0 .5
1 0 -1
0 .2
0 .1
0 .0 5
1 0 -2
1 0 -5
0 .0 2
0 .0 1
s in g le p u ls e
PDM
t1
t2
* N o tes :
1 . Z θJC(t) = 0 .6 4 oC /W M a x.
2 . D uty F a c tor, D = t1/t2
3 . T JM - T C = P DM * Z θJC(t)
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
t1, S q u a re W a ve P u lse D u ra tio n [s e c ]
101
Figure 11-2. Transient Thermal Response Curve for FQPF11N50CF
D = 0 .5
100
0 .2
1 0 -1
0 .1
0 .0 5
0 .0 2
0 .0 1
1 0 -2
1 0 -5
sin g le p u ls e
PDM
t1
t2
* N otes :
1 . Z θJC(t) = 2 .5 8 oC /W M a x .
2 . D u ty F a cto r, D = t1/t2
3.
T
JM
-
T
C
=
P
DM
*
Z θJC(t)
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
t1, S q u a re W a ve P u ls e D u ra tio n [s e c ]
101
FQP11N50CF/FQPF11N50CF Rev. A
5
www.fairchildsemi.com

5 Page










PáginasTotal 10 Páginas
PDF Descargar[ Datasheet FQP11N50CF.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
FQP11N50CF500V N-Channel MOSFETFairchild Semiconductor
Fairchild Semiconductor

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar