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PDF W9825G6EH Data sheet ( Hoja de datos )

Número de pieza W9825G6EH
Descripción 4M X 4-Bank X 16-Bit SDRAM
Fabricantes WinBond 
Logotipo WinBond Logotipo



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W9825G6EH
4 M × 4 BANKS × 16 BITS SDRAM
Table of Contents-
1. GENERAL DESCRIPTION ......................................................................................................... 3
2. FEATURES ................................................................................................................................. 3
3. AVAILABLE PART NUMBER...................................................................................................... 3
4. PIN CONFIGURATION ............................................................................................................... 4
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5. PIN DESCRIPTION..................................................................................................................... 5
6. BLOCK DIAGRAM ...................................................................................................................... 6
7. FUNCTIONAL DESCRIPTION.................................................................................................... 7
7.1 Power Up and Initialization ............................................................................................. 7
7.2 Programming Mode Register.......................................................................................... 7
7.3 Bank Activate Command ................................................................................................ 7
7.4 Read and Write Access Modes ...................................................................................... 7
7.5 Burst Read Command .................................................................................................... 8
7.6 Burst Write Command .................................................................................................... 8
7.7 Read Interrupted by a Read ........................................................................................... 8
7.8 Read Interrupted by a Write............................................................................................ 8
7.9 Write Interrupted by a Write............................................................................................ 8
7.10 Write Interrupted by a Read............................................................................................ 8
7.11 Burst Stop Command ..................................................................................................... 8
7.12 Addressing Sequence of Sequential Mode .................................................................... 9
7.13 Addressing Sequence of Interleave Mode...................................................................... 9
7.14 Auto-precharge Command ........................................................................................... 10
7.15 Precharge Command.................................................................................................... 10
7.16 Self Refresh Command ................................................................................................ 10
7.17 Power Down Mode ....................................................................................................... 11
7.18 No Operation Command............................................................................................... 11
7.19 Deselect Command ...................................................................................................... 11
7.20 Clock Suspend Mode.................................................................................................... 11
8. OPERATION MODE ................................................................................................................. 12
9. ELECTRICAL CHARACTERISTICS......................................................................................... 13
9.1 Absolute Maximum Ratings .......................................................................................... 13
9.2 Recommended DC Operating Conditions .................................................................... 13
Publication Release Date: Mar. 11, 2010
- 1 - Revision A09

1 page




W9825G6EH pdf
W9825G6EH
5. PIN DESCRIPTION
PIN NUMBER PIN NAME FUNCTION
DESCRIPTION
2326, 22,
2936
20, 21
A0A12
BS0, BS1
Address
Bank Select
Multiplexed pins for row and column address.
Row address: A0A12. Column address: A0A8.
Select bank to activate during row address latch time, or
bank to read/write during address latch time.
2, 4, 5, 7, 8, 10,
11, 13, 42, 44,
45, 47, 48, 50,
DQ0DQ15
www.DataSheet4U.5co1m, 53
Data
Input/Output
Multiplexed pins for data output and input.
Disable or enable the command decoder. When
19 CS Chip Select command decoder is disabled, new command is
ignored and previous operation continues.
Command input. When sampled at the rising edge of
18
RAS
Row Address
Strobe
the clock,
RAS ,
CAS
and
WE
define the operation
to be executed.
Column
17
CAS
Address Referred to RAS
Strobe
16 WE Write Enable Referred to RAS
15, 39
38
37
1, 14, 27
28, 41, 54
3, 9, 43, 49
6, 12, 46, 52
LDQM,
UDQM
CLK
CKE
VDD
VSS
VDDQ
VSSQ
Input/Output
Mask
The output buffer is placed at Hi-Z(with latency of 2)
when DQM is sampled high in read cycle. In write
cycle, sampling DQM high will block the write operation
with zero latency.
Clock Inputs
System clock used to sample inputs on the rising edge
of clock.
CKE controls the clock activation and deactivation.
Clock Enable When CKE is low, Power Down mode, Suspend mode,
or Self Refresh mode is entered.
Power (+3.3V) Power for input buffers and logic circuit inside DRAM.
Ground Ground for input buffers and logic circuit inside DRAM.
Power (+3.3V) Separated power from VDD, to improve DQ noise
for I/O Buffer immunity.
Ground Separated ground from VSS, to improve DQ noise
for I/O Buffer immunity.
40
NC
No Connection
No connection. (NC pin should be connected to GND
or floating)
Publication Release Date: Mar. 11, 2010
- 5 - Revision A09

5 Page





W9825G6EH arduino
W9825G6EH
7.17 Power Down Mode
The Power Down mode is initiated by holding CKE low. All of the receiver circuits except CKE are
gated off to reduce the power. The Power Down mode does not perform any refresh operations,
therefore the device can not remain in Power Down mode longer than the Refresh period (tREF) of the
device.
The Power Down mode is exited by bringing CKE high. When CKE goes high, a No Operation
Command is required on the next rising clock edge, depending on tCK. The input buffers need to be
enabled with CKE held high for a period equal to tCKS (min) + tCK (min).
www.DataShe7e.1t48U.cNomo Operation Command
The No Operation Command should be used in cases when the SDRAM is in a idle or a wait state to
prevent the SDRAM from registering any unwanted commands between operations. A No Operation
Command is registered when CS is low with RAS , CAS and WE held high at the rising edge of
the clock. A No Operation Command will not terminate a previous operation that is still executing, such
as a burst read or write cycle.
7.19 Deselect Command
The Deselect Command performs the same function as a No Operation Command. Deselect
Command occurs when CS is brought high, the RAS , CAS and WE signals become don't
cares.
7.20 Clock Suspend Mode
During normal access mode, CKE must be held high enabling the clock. When CKE is registered low
while at least one of the banks is active, Clock Suspend Mode is entered. The Clock Suspend mode
deactivates the internal clock and suspends any clocked operation that was currently being executed.
There is a one clock delay between the registration of CKE low and the time at which the SDRAM
operation suspends. While in Clock Suspend mode, the SDRAM ignores any new commands that are
issued. The Clock Suspend mode is exited by bringing CKE high. There is a one clock cycle delay
from when CKE returns high to when Clock Suspend mode is exited.
- 11 -
Publication Release Date: Mar. 11, 2010
Revision A09

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