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PDF KHB7D0N65F2 Data sheet ( Hoja de datos )
| Número de pieza | KHB7D0N65F2 | |
| Descripción | N-CHANNEL MOS FIELD EFFECT TRANSISTOR | |
| Fabricantes | KEC | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de KHB7D0N65F2 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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SEMICONDUCTOR
TECHNICAL DATA
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for active power factor
correction and switching mode power supplies.
FEATURES
VDSS=650V, ID=7A
Drain-Source ON Resistance :
RDS(ON)=1.4 @VGS=10V
Qg(typ.)= 32nC
wwMwA.DXaItMaSUheMetR4UA.cToImNG (Tc=25 )
CHARACTERISTIC
RATING
SYMBOL
KHB7D0N65F1 UNIT
KHB7D0N65P1
KHB7D0N65F2
Drain-Source Voltage
Gate-Source Voltage
VDSS
VGSS
650 V
30 V
@TC=25
Drain Current @TC=100
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Drain Power
Dissipation
Tc=25
Derate above 25
Maximum Junction Temperature
Storage Temperature Range
Thermal Characteristics
ID
IDP
EAS
EAR
dv/dt
PD
Tj
Tstg
7 7*
4.2 4.2*
28 28*
212
1.6
4.5
160 52
1.28 0.42
150
-55 150
A
mJ
mJ
V/ns
W
W/
Thermal Resistance, Junction-to-Case RthJC
0.78
Thermal Resistance, Case-to-Sink
RthCS
0.5
Thermal Resistance,
Junction-to-Ambient
RthJA
62.5
* : Drain current limited by maximum junction temperature.
PIN CONNECTION
2.4 /W
- /W
62.5 /W
D
G
2007. 5. 10
S
Revision No : 0
KHB7D0N65P1/F1/F2
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
KHB7D0N65P1
A
E
I
K
M
D
NN
F
G
B
Q
L
J
O
C
P
H
123
1. GATE
2. DRAIN
3. SOURCE
DIM MILLIMETERS
A 9.9 +_ 0.2
B 15.95 MAX
C 1.3+0.1/-0.05
D 0.8 +_ 0.1
E 3.6 +_ 0.2
F 2.8 +_ 0.1
G 3.7
H 0.5+0.1/-0.05
I 1.5
J 13.08 +_ 0.3
K 1.46
L 1.4 +_ 0.1
M 1.27 +_ 0.1
N 2.54 +_ 0.2
O 4.5 +_ 0.2
P 2.4 +_ 0.2
Q 9.2 +_ 0.2
TO-220AB
KHB7D0N65F1
AC
E
LM
D
NN
123
R
H
1. GATE
2. DRAIN
3. SOURCE
DIM MILLIMETERS
A 10.16 +_ 0.2
B 15.87 +_ 0.2
C 2.54 +_ 0.2
D 0.8 +_ 0.1
E 3.18 +_ 0.1
F 3.3 +_ 0.1
G 12.57 +_ 0.2
H 0.5 +_ 0.1
J 13.0 MAX
K 3.23 +_ 0.1
L 1.47 MAX
M 1.47 MAX
N 2.54 +_ 0.2
O 6.68 +_ 0.2
Q 4.7 +_ 0.2
R 2.76 +_ 0.2
TO-220IS (1)
KHB7D0N65F2
AC
S
E
LL
M
DD
NN
123
R
H
1. GATE
2. DRAIN
3. SOURCE
DIM MILLIMETERS
A 10.0 +_0.3
B 15.0+_ 0.3
C 2.70+_ 0.3
D 0.76+0.09/-0.05
E Φ3.2 +_0.2
F 3.0+_0.3
G 12.0 +_0.3
H 0.5+0.1/-0.05
J 13.6 +_0.5
K 3.7+_ 0.2
L 1.2+0.25/-0.1
M 1.5+0.25/-0.1
N 2.54 +_0.1
P 6.8 +_0.1
Q 4.5+_ 0.2
R 2.6+_ 0.2
S 0.5 Typ
TO-220IS
1/7
1 page  
KHB7D0N65P1/F1/F2
Fig12. Transient Thermal Response Curve
100
Duty=0.5
0.2
10-1 0.1
0.05
0.02
0.01
10-2
www.DataSheet4U.com 10-5
Single Pulse
10-4
10-3 10-2
TIME (sec)
PDM
t1
t2
- Duty Factor, D= t1/t2
10-1 100 101
Fig13. Transient Thermal Response Curve
100
Duty=0.5
0.2
10-1 0.1
0.05
0.02
0.01
10-2
10-5
10-4
Single Pulse
10-3
10-2
TIME (sec)
PDM
t1
t2
- Duty Factor, D= t1/t2
10-1 100 101
2007. 5. 10
Revision No : 0
5/7
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet KHB7D0N65F2.PDF ] | |
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