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PDF R1EX24008ASA00I Data sheet ( Hoja de datos )

Número de pieza R1EX24008ASA00I
Descripción Two-wire serial interface 8k EEPROM
Fabricantes Renesas Technology 
Logotipo Renesas Technology Logotipo



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R1EX24008ASA00I
R1EX24008ATA00I
Two-wire serial interface
8k EEPROM (1-kword × 8-bit)
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REJ03C0363-0001
Preliminary
Rev.0.01
Dec. 28, 2007
Description
R1EX24xxx series are two-wire serial interface EEPROM (Electrically Erasable and Programmable
ROM). They realize high speed, low power consumption and a high level of reliability by employing
advanced MNOS memory technology and CMOS process and low voltage circuitry technology. They
also have a 16-byte page programming function to make their write operation faster.
Features
Single supply: 1.8 V to 5.5 V
Two-wire serial interface (I2C serial bus)
Clock frequency: 400 kHz
Power dissipation:
Standby: 2 µA (max)
Active (Read): 1 mA (max)
Active (Write): 3.0 mA (max)
Automatic page write: 16-byte/page
Write cycle time: 5 ms
Endurance: 106 Cycles
Data retention: 10 Years
Preliminary: The specifications of this device are subject to change without notice. Please contact your
nearest Renesas Technology’s Sales Dept. regarding specifications.
REJ03C0363-0001 Rev.0.01 Dec. 28, 2007
Page 1 of 20

1 page




R1EX24008ASA00I pdf
R1EX24008Axx00I
AC Characteristics (Ta = 40 to +85°C, VCC = 1.8 to 5.5 V)
Test Conditions
Input pules levels:
VIL = 0.2 × VCC
VIH = 0.8 × VCC
Input rise and fall time: 20 ns
Input and output timing reference levels: 0.5 × VCC
Output load: TTL Gate + 100 pF
Parameter
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Clock frequency
Clock pulse width low
Clock pulse width high
Noise suppression time
Access time
Bus free time for next mode
Start hold time
Start setup time
Data in hold time
Data in setup time
Input rise time
Input fall time
Stop setup time
Data out hold time
Write protect hold time
Write protect setup time
Write cycle time
Erase/Write Endurance
Symbol Min
f
SCL
tLOW
tHIGH
t
I
t
AA
tBUF
tHD.STA
t
SU.STA
t
HD.DAT
tSU.DAT
tR
t
F
t
SU.STO
tDH
tHD.WP
t
SU.WP
t
WC
1200
600
100
1200
600
600
0
100
600
50
1200
0
Typ
106
Max
400
50
900
300
300
5
Unit
kHz
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ms
cycles
Notes: 1. This parameter is sampled and not 100% tested.
2. t is the time from a stop condition to the end of internally controlled write cycle.
WC
3. This parameter is sampled and not 100% tested.
106 Cycles (Ta = 25°C)
105 Cycles (Ta = 85°C)
Notes
1
1
1
2
3
REJ03C0363-0001 Rev.0.01 Dec. 28, 2007
Page 5 of 20

5 Page





R1EX24008ASA00I arduino
R1EX24008Axx00I
Device Addressing
The EEPROM device requires an 8-bit device address word following a start condition to enable the chip
for a read or a write operation. The device address word consists of 4-bit device code, 3-bit device
address code and 1-bit read/write(R/W) code. The most significant 4-bit of the device address word are
used to distinguish device type and this EEPROM uses “1010” fixed code. The device address word is
followed by the 3-bit device address code in the order of A2, A1, A0. The device address code selects one
device out of all devices which are connected to the bus. This means that the device is selected if the
inputted 3-bit device address code is equal to the corresponding hard-wired A2-A0 pin status. The
eighth bit of the device address word is the read/write(R/W) bit. A write operation is initiated if this bit is
low and a read operation is initiated if this bit is high. Upon a compare of the device address word, the
www.DataSheetE4EU.PcRoOmM enters the read or write operation after outputting the zero as an acknowledge. The EEPROM
turns to a stand-by state if the device code is not “1010” or device address code doesn’t coincide with
status of the correspond hard-wired device address pins A0 to A2.
Device Address Word
Device address word (8-bit)
Device code (fixed)
8k 1 0 1 0
Note: 1. R/W=“1” is read and R/W = “0” is write.
Device address code
A2 a9
a8
R/W code*1
R/W
REJ03C0363-0001 Rev.0.01 Dec. 28, 2007
Page 11 of 20

11 Page







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