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PDF K3637 Data sheet ( Hoja de datos )
| Número de pieza | K3637 | |
| Descripción | MOSFET ( Transistor ) - 2SK3637 | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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Power MOSFETs
2SK3637
Silicon N-channel power MOSFET
For PDP/For high-speed switching
15.5±0.5 φ 3.2±0.1
Unit: mm
3.0±0.3
5˚
5˚
■ Features
• Low on-resistance, low Qg
• High avalanche resistance
■ Absolute Maximum Ratings TC = 25°C
Parameter
www.DDaratian-Sshoeurecet4sUu.rcreonmder voltage
Gate-source surrender voltage
Drain current
Peak drain current
Avalanche energy capability *
Symbol
VDSS
VGSS
ID
IDP
EAS
Rating
200
±30
50
200
2 000
Unit
V
V
A
A
mJ
Power
dissipation
Ta = 25°C
Channel temperature
Storage temperature
PD 100
3
Tch 150
Tstg −55 to +150
W
°C
°C
Note) *: L = 0.8 mH, IL = 50 A, VDD = 100 V, 1 pulse, Ta = 25°C
(4.0)
2.0±0.2
5˚
5˚
5˚
1.1±0.1
0.7±0.1
5.45±0.3
10.9±0.5
5˚
12 3
1: Gate
2: Drain
3: Source
TOP-3E-A1 Package
Internal Connection
D
G
■ Electrical Characteristics TC = 25°C ± 3°C
S
Parameter
Symbol
Conditions
Min Typ Max Unit
Gate-drain surrender voltage
Diode forward voltage
Gate threshold voltage
Drain-source cutoff current
Gate-source cutoff currentt
Drain-source on resistance
Forward transfer admittance
Short-circuit forward transfer capacitance
(Common-source)
VDSS
VDSF
Vth
IDSS
IGSS
RDS(on)
Yfs
Ciss
ID = 1 mA, VGS = 0
IDR = 50 A, VGS = 0
VDS = 25 V, ID = 10 mA
VDS = 160 V, VGS = 0
VGS = ±30 V, VDS = 0
VGS = 10 V, ID = 25 A
VDS = 25 V, ID = 25 A
VDS = 25 V, VGS = 0, f = 1 MHz
200
−1.5
24
100
±1
29 40
15 30
4 550
V
V
V
µA
µA
mΩ
S
pF
Short-circuit output capacitance
(Common-source)
Coss
750 pF
Reverse transfer capacitance
(Common-source)
Crss
75 pF
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Reverse recovery time
Reverse recovery charge
td(on)
tr
td(off)
tf
trr
Qrr
VDD = 100 V, ID = 25 A
RL = 4 Ω, VGS = 10 V
L = 230 µH, VDD = 100 V
IDR = 25 A, di /dt = 100 A/ µs
50 ns
125 ns
390 ns
140 ns
210 ns
820 nC
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: February 2004
SJG00035AED
1
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet K3637.PDF ] | |
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