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PDF K249 Data sheet ( Hoja de datos )
| Número de pieza | K249 | |
| Descripción | 3SK249 | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de K249 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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TOSHIBA Field Effect Transistor Silicon N Channel Dual Gate MOS Type
3SK249
3SK249
TV Tuner, UHF RF Amplifier Applications
Unit: mm
• Superior cross modulation performance.
• Low reverse transfer capacitance: Crss = 20 fF (typ.)
• Low noise figure.: NF = 1.5dB (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Gate 1-source voltage
Gate 2-source voltage
Drain current
Drain power dissipation
Channel temperature
Storage temperature range
VDS
VG1S
VG2S
ID
PD
Tch
Tstg
12.5
±8
±8
30
100
125
−55~125
V
V
V
mA
mW
°C
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
JEDEC
―
temperature, etc.) may cause this product to decrease in the
JEITA
―
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
TOSHIBA
2-2K1B
absolute maximum ratings.
Weight: 0.006 g (typ.)
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate 1 leakage current
Gate 2 leakage current
Drain-source voltage
Drain current
Gate 1-source cut-off voltage
Gate 2-source cut-off voltage
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Power gain
Noise figure
Symbol
Test Condition
Min Typ. Max Unit
IG1SS
VDS = 0, VG1S = ±6 V, VG2S = 0
⎯ ⎯ ±50 nA
IG2SS
VDS = 0, VG1S = 0, VG2S = ±6 V
⎯ ⎯ ±50 nA
V (BR) DSX
VG1S = −0.5 V, VG2S = −0.5 V
ID = 100 μA
12.5 ⎯
⎯
V
IDSS
VDS = 6 V, VG2S = 4.5 V, VG1S = 0 V
0
⎯ 0.1 mA
VG1S (OFF) VDS = 6 V, VG2S = 4.5 V, ID = 100 μA 0.4 0.9 1.4
V
VG2S (OFF) VDS = 6 V, VG1S = 4.0 V, ID = 100 μA 0.5 1.0 1.5
V
⎪Yfs⎪
VDS = 6 V, VG2S = 4.5 V, ID = 10 mA,
f = 1 kHz
17
21
⎯
mS
Ciss
Crss
VDS = 6 V, VG2S = 4.5 V, ID = 10 mA, 0.9 1.5 2.1 pF
f = 1 MHz
⎯ 20 40 fF
Gps VDS = 6 V, VG2S = 4.5 V, ID = 10 mA, 18 20 ⎯ dB
NF f = 800 MHz
⎯ 1.5 2.5 dB
1 2007-11-01
1 page  
3SK249
5 2007-11-01
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet K249.PDF ] | |
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