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PDF K4X51323PC-7G Data sheet ( Hoja de datos )
| Número de pieza | K4X51323PC-7G | |
| Descripción | 16M x32 Mobile-DDR SDRAM | |
| Fabricantes | Samsung semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de K4X51323PC-7G (archivo pdf) en la parte inferior de esta página. Total 25 Páginas | ||
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K4X51323PC - 7(8)E/G
Preliminary
Mobile-DDR SDRAM
www.DataSheet4U.com
16M x32
Mobile-DDR SDRAM
1 Revision 0.6
October 2005
1 page  
K4X51323PC - 7(8)E/G
Preliminary
Mobile-DDR SDRAM
9
A
B
C
D
E
F
G
www.DataSheet4U.com H
J
K
L
M
N
P
R
Package Dimension and Pin Configuration
< Bottom View*1 >
E1
8765432
1
< Top View*2 >
90Ball(6x15) FBGA
1237
A VSS DQ31 VSSQ VDDQ
B VDDQ DQ29 DQ30 DQ17
C VSSQ DQ27 DQ28 DQ19
D VDDQ DQ25 DQ26 DQ21
E VSSQ DQS3 DQ24 DQ23
F VDD DM3 NC
NC
G CKE CK CK WE
H A9 A11 A12 CS
J A6 A7 A8 A10
K A4 DM1 A5
A2
L VSSQ DQS1 DQ8 DQ7
M VDDQ DQ9 DQ10 DQ5
N VSSQ DQ11 DQ12 DQ3
P VDDQ DQ13 DQ14 DQ1
R VSS DQ15 VSSQ VDDQ
E
8
DQ16
DQ18
DQ20
DQ22
DQS2
DM2
CAS
BA0
A0
DM0
DQS0
DQ6
DQ4
DQ2
DQ0
9
VDD
VSSQ
VDDQ
VSSQ
VDDQ
VSS
RAS
BA1
A1
A3
VDDQ
VSSQ
VDDQ
VSSQ
VDD
z
b
< Top View*1 >
#A1 Ball Origin Indicator
A
A1
Ball Name
CK, CK
CS
CKE
A0 ~ A12
BA0 ~ BA1
RAS
CAS
WE
DM0~3
DQS0~3
DQ0 ~ 31
VDD/VSS
VDDQ/VSSQ
Ball Function
System Differential Clock
Chip Select
Clock Enable
Address
Bank Select Address
Row Address Strobe
Column Address Strobe
Write Enable
Data Input Mask
Data Strobe
Data Input/Output
Power Supply/Ground
Data Output Power/Ground
Symbol
A
A1
E
E1
D
D1
e
b
z
Min
-
0.25
10.9
-
13.2
-
-
0.45
-
Typ
-
-
11.0
6.40
13.0
11.2
0.80
0.50
-
[Unit::mm]
Max
1.00
-
11.1
-
13.1
-
-
0.55
0.10
5 Revision 0.6
October 2005
5 Page 
K4X51323PC - 7(8)E/G
Preliminary
Mobile-DDR SDRAM
Internal Temperature Compensated Self Refresh (TCSR)
Note :
1. In order to save power consumption, Mobile DDR SDRAM includes the internal temperature sensor and control units to control the
self refresh cycle automatically according to the three temperature ranges ; 45 °C and 85 °C.
2. If the EMRS for external TCSR is issued by the controller, this EMRS code for TCSR is ignored.
3. It has +/- 5 °C tolerance.
Self Refresh Current (IDD6)
Temperature Range
-E
-G
Full Array 1/2 Array 1/4 Array Full Array 1/2 Array
1/4 Array
Unit
45 °C*3
www.DataSheet4U.com 85 °C
300 270 255 250 220 205
600 500 450 500 400 350
uA
Partial Array Self Refresh (PASR)
Note :
1. In order to save power consumption, Mobile-DDR SDRAM includes PASR option.
2. Mobile-DDR SDRAM supports three kinds of PASR in self refresh mode; Full array, 1/2 Array, 1/4 Array.
BA1=0 BA1=0
BA0=0 BA0=1
BA1=1 BA1=1
BA0=0 BA0=1
- Full Array
BA1=0 BA1=0
BA0=0 BA0=1
BA1=1 BA1=1
BA0=0 BA0=1
- 1/2 Array
BA1=0 BA1=0
BA0=0 BA0=1
BA1=1 BA1=1
BA0=0 BA0=1
- 1/4 Array
Partial Self Refresh Area
Figure.4 EMRS code and TCSR , PASR
11 Revision 0.6
October 2005
11 Page | ||
| Páginas | Total 25 Páginas | |
| PDF Descargar | [ Datasheet K4X51323PC-7G.PDF ] | |
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