PDF K4X51163PE-FG Data sheet ( Hoja de datos )

Número de pieza	K4X51163PE-FG
Descripción	32Mx16 Mobile DDR SDRAM
Fabricantes	Samsung semiconductor
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No Preview Available ! K4X51163PE - L(F)E/G Mobile DDR SDRAM 32Mx16 Mobile DDR SDRAM 1. FEATURES • VDD/VDDQ = 1.8V/1.8V • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • Differential clock inputs(CK and CK) • MRS cycle with address key programs - CAS Latency ( 3 ) - Burst Length ( 2, 4, 8, 16 ) - Burst Type (Sequential & Interleave) • EMRS cycle with address key programs - Partial Array Self Refresh ( Full, 1/2, 1/4 Array ) - Output Driver Strength Control ( Full, 1/2, 1/4, 1/8 ) • Internal Temperature Compensated Self Refresh • All inputs except data & DM are sampled at the positive going edge of the system clock(CK). www.Da• DtaaStaheI/eOt4trUa.ncsoamctions on both edges of data strobe, DM for masking. • Edge aligned data output, center aligned data input. • No DLL; CK to DQS is not synchronized. • DM0 - DM3 for write masking only. • Auto refresh duty cycle - 7.8us for -25 to 85 °C 2. Operating Frequency Speed @CL21) Speed @CL31) NOTE: 1) CAS Latency 3. Address configuration DDR333 83Mhz 166Mhz DDR266 83Mhz 133Mhz Organization 32Mx16 - DM is internally loaded to match DQ and DQS identically. Bank Address BA0,BA1 Row Address A0 - A12 Column Address A0 - A9 4. Ordering Information Part No. K4X51163PE-L(F)E/GC6 K4X51163PE-L(F)E/GC3 Max Freq. 166MHz(CL=3),83MHz(CL=2) 133MHz(CL=3),83MHz(CL=2) - L(F)E : 60FBGA Pb(Pb Free), Normal Power, Extended Temperature(-25 °C ~ 85 °C) - L(F)G : 60FBGA Pb(Pb Free), Low Power, Extended Temperature(-25 °C ~ 85 °C) - C6/C3 : 166MHz(CL=3) / 133MHz(CL=3) Interface LVCMOS Package 60FBGA Pb (Pb Free) INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTH- ING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL INFORMATION IN THIS DOCUMENT IS PROVIDED ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND. 1. For updates or additional information about Samsung products, contact your nearest Samsung office. 2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar applications where Product failure could result in loss of life or personal or physical harm, or any military or defense application, or any governmental procurement to which special terms or provisions may apply. - 4 - June 2007 1 page K4X51163PE - L(F)E/G 8. Functional Description POWER APPLIED POWER ON PRECHARGE ALL BANKS www.DataSheet4U.com EMRS MRS Mobile DDR SDRAM Figure 1. State diagram CKEH MRS DEEP POWER DOWN PARTIAL SELF REFRESH SELF DEEP REFRESH POWER DOWN REFS IDLE ALL BANKS PRECHARGED REFSX REFA CKEL AUTO REFRESH CKEH ACT POWER DOWN POWER DOWN CKEH CKEL WRITE ROW ACTIVE BURST STOP READ WRITEA WRITE WRITEA READA READ READ WRITEA WRITEA READA PRE PRE PRE READA READA PRE PRECHARGE PREALL Automatic Sequence Command Sequence - 8 - June 2007 5 Page K4X51163PE - L(F)E/G Mobile DDR SDRAM 12. DC CHARACTERISTICS Recommended operating conditions (Voltage referenced to VSS = 0V, Tc = -25 to 85°C) Parameter Symbol Test Condition DDR333 DDR266 Unit Note Operating Current (One Bank Active) IDD0 tRC=tRCmin; tCK=tCKmin; CKE is HIGH; CS is HIGH between valid commands; address inputs are SWITCHING; data bus inputs are STABLE 70 65 mA Precharge Standby Current in power-down mode IDD2P IDD2PS all banks idle, CKE is LOW; CS is HIGH, tCK = tCKmin; address and control inputs are SWITCHING; data bus inputs are STABLE all banks idle, CKE is LOW; CS is HIGH, CK = LOW, CK = HIGH; address and control inputs are SWITCHING; data bus inputs are STABLE 0.3 mA 0.3 Precharge Standby Current in non power-down mode IDD2N all banks idle, CKE is HIGH; CS is HIGH, tCK = tCKmin; address and control inputs are SWITCHING; data bus inputs are STABLE IDD2NS all banks idle, CKE is HIGH; CS is HIGH, CK = LOW, CK = HIGH; address and control inputs are SWITCHING; data bus inputs are STABLE 15 12 mA 88 Active Standby Current www.DaintapoSwheer-edto4wUn.cmoomde IDD3P one bank active, CKE is LOW; CS is HIGH, tCK = tCKmin; address and control inputs are SWITCHING; data bus inputs are STABLE IDD3PS one bank active, CKE is LOW; CS is HIGH, CK = LOW, CK = HIGH; address and control inputs are SWITCHING; data bus inputs are STABLE 5 mA 2 Active Standby Current in non power-down mode (One Bank Active) IDD3N one bank active, CKE is HIGH; CS is HIGH, tCK = tCKmin; address and control inputs are SWITCHING; data bus inputs are STABLE IDD3NS one bank active, CKE is HIGH; CS is HIGH, CK = LOW, CK = HIGH; address and control inputs are SWITCHING; data bus inputs are STABLE 25 25 mA 20 20 Operating Current (Burst Mode) IDD4R one bank active; BL=4; CL=3; tCK = tCKmin; continuous read bursts; I OUT =0 mA address inputs are SWITCHING; 50% data change each burst transfer IDD4W one bank active; BL = 4; tCK = tCKmin ; continuous write bursts; address inputs are SWITCHING; 50% data change each burst transfer 140 115 115 mA 100 Refresh Current Self Refresh Current IDD5 IDD6 tRC = tRFCmin ; tCK = tCKmin ; burst refresh; CKE is HIGH; address and control inputs are SWITCHING; data bus inputs are STABLE CKE is LOW; t CK = t CKmin ; Extended Mode Register set to all 0’s; address and control inputs are STABLE; data bus inputs are STABLE Internal TCSR Full Array - E 1/2 Array 1/4 Array Full Array - G 1/2 Array 150 451) 300 270 255 250 220 135 mA 85 °C 600 500 450 uA 500 400 1/4 Array 205 350 Deep Power Down Current IDD8 Deep Power Down Mode Current 15 uA 2 NOTE : 1) It has +/- 5°C tolerance. 2) DPD(Deep Power Down) function is an optional feature, and it will be enabled upon request. Please contact Samsung for more information. 3) IDD specifications are tested after the device is properly intialized. 4) Input slew rate is 1V/ns. 5) Definitions for IDD: LOW is defined as V IN ≤ 0.1 * VDDQ ; HIGH is defined as V IN ≥ 0.9 * VDDQ ; STABLE is defined as inputs stable at a HIGH or LOW level ; SWITCHING is defined as: - address and command: inputs changing between HIGH and LOW once per two clock cycles ; - data bus inputs: DQ changing between HIGH and LOW once per clock cycle; DM and DQS are STABLE. - 14 - June 2007 11 Page

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Número de pieza	Descripción	Fabricantes
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K4X51163PE-FG	32Mx16 Mobile DDR SDRAM	Samsung semiconductor

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