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Número de pieza | SEMIX302GB066HDS | |
Descripción | Trench IGBT Modules | |
Fabricantes | Semikron International | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de SEMIX302GB066HDS (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
No Preview Available ! SEMiX302GB066HDs
SEMiX®2s
Trench IGBT Modules
SEMiX302GB066HDs
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Features
• Homogeneous Si
• Trench = Trenchgate technology
• VCE(sat) with positive temperature
coefficient
• UL recognised file no. E63532
Typical Applications
• Matrix Converter
• Resonant Inverter
• Current Source Inverter
Remarks
• Case temperature limited to TC=125°C
max.
• Product reliability results are valid for
Tj=150°C
• For short circuit: Soft RGoff
recommended
• Take care of over-voltage caused by
stray inductance
Absolute Maximum Ratings
Symbol Conditions
IGBT
VCES
IC
ICnom
ICRM
VGES
tpsc
Tj
Tj = 175 °C
ICRM = 2xICnom
VCC = 360 V
VGE ≤ 15 V
Tj = 150 °C
VCES ≤ 600 V
Tc = 25 °C
Tc = 80 °C
Inverse diode
IF
Tj = 175 °C
Tc = 25 °C
Tc = 80 °C
IFnom
IFRM
IFRM = 2xIFnom
IFSM tp = 10 ms, sin 180°, Tj = 25 °C
Tj
Module
It(RMS)
Tstg
Visol
AC sinus 50Hz, t = 1 min
Characteristics
Symbol Conditions
IGBT
VCE(sat)
VCE0
rCE
VGE(th)
ICES
Cies
Coes
Cres
QG
RGint
td(on)
tr
Eon
td(off)
tf
Eoff
Rth(j-c)
IC = 300 A
VGE = 15 V
chiplevel
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
VGE = 15 V
Tj = 25 °C
Tj = 150 °C
VGE=VCE, IC = 4.8 mA
VGE = 0 V
VCE = 600 V
Tj = 25 °C
Tj = 150 °C
VCE = 25 V
VGE = 0 V
f = 1 MHz
f = 1 MHz
f = 1 MHz
VGE = - 8 V...+ 15 V
Tj = 25 °C
VCC = 300 V
IC = 300 A
Tj = 150 °C
RG on = 5.1 Ω
RG off = 5.1 Ω
per IGBT
Values
600
379
286
300
600
-20 ... 20
6
-40 ... 175
419
307
300
600
1400
-40 ... 175
600
-40 ... 125
4000
Unit
V
A
A
A
A
V
µs
°C
A
A
A
A
A
°C
A
°C
V
min.
5
typ.
1.45
1.70
0.9
0.85
1.8
2.8
5.8
0.15
18.5
1.15
0.55
2400
1.00
110
85
11.5
820
70
15
max. Unit
1.9
2.1
1
0.9
3.0
4.0
6.5
0.45
0.16
V
V
V
V
mΩ
mΩ
V
mA
mA
nF
nF
nF
nC
Ω
ns
ns
mJ
ns
ns
mJ
K/W
GB
© by SEMIKRON
Rev. 11 – 02.12.2008
1
1 page SEMiX302GB066HDs
www.DataSheet4U.com
SEMiX 2s
GB
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied
is made regarding delivery, performance or suitability.
© by SEMIKRON
Rev. 11 – 02.12.2008
5
5 Page |
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PDF Descargar | [ Datasheet SEMIX302GB066HDS.PDF ] |
Número de pieza | Descripción | Fabricantes |
SEMIX302GB066HD | Trench IGBT Modules | Semikron International |
SEMIX302GB066HDS | Trench IGBT Modules | Semikron International |
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