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PDF SEMIX302GAR12E4S Data sheet ( Hoja de datos )

Número de pieza SEMIX302GAR12E4S
Descripción Trench IGBT Modules
Fabricantes Semikron International 
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No Preview Available ! SEMIX302GAR12E4S Hoja de datos, Descripción, Manual

SEMiX302GAR12E4s
SEMiX®2s
Trench IGBT Modules
SEMiX302GAR12E4s
www.DataSheet4U.com
Features
• Homogeneous Si
• Trench = Trenchgate technology
• VCE(sat) with positive temperature
coefficient
• High short circuit capability
• UL recognised file no. E63532
Typical Applications
• AC inverter drives
• UPS
• Electronic Welding
Remarks
• Case temperature limited to TC=125°C
max.
• Product reliability results are valid for
Tj=150°C
• Dynamic values apply to the
following combination of resistors:
RGon,main = 0,5
RGoff,main = 0,5
RG,X = 2,2
RE,X = 0,5
Absolute Maximum Ratings
Symbol Conditions
IGBT
VCES
IC
ICnom
ICRM
VGES
tpsc
Tj
Tj = 175 °C
ICRM = 3xICnom
VCC = 800 V
VGE 20 V
VCES 1200 V
Tc = 25 °C
Tc = 80 °C
Tj = 150 °C
Inverse diode
IF
Tj = 175 °C
Tc = 25 °C
Tc = 80 °C
IFnom
IFRM
IFRM = 3xIFnom
IFSM tp = 10 ms, sin 180°, Tj = 25 °C
Tj
Freewheeling diode
IF
Tj = 175 °C
Tc = 25 °C
Tc = 80 °C
IFnom
IFRM
IFRM = 3xIFnom
IFSM tp = 10 ms, sin 180°, Tj = 25 °C
Tj
Module
It(RMS)
Tstg
Visol
AC sinus 50Hz, t = 1 min
Characteristics
Symbol Conditions
IGBT
VCE(sat)
VCE0
rCE
VGE(th)
ICES
Cies
Coes
Cres
QG
RGint
IC = 300 A
VGE = 15 V
chiplevel
Tj = 25 °C
Tj = 150 °C
VGE = 15 V
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
VGE=VCE, IC = 12 mA
VGE = 0 V
VCE = 1200 V
Tj = 25 °C
Tj = 150 °C
VCE = 25 V
VGE = 0 V
f = 1 MHz
f = 1 MHz
f = 1 MHz
VGE = - 8 V...+ 15 V
Tj = 25 °C
Values
1200
463
356
300
900
-20 ... 20
10
-40 ... 175
356
266
300
900
1620
-40 ... 175
356
266
300
900
1620
-40 ... 175
600
-40 ... 125
4000
Unit
V
A
A
A
A
V
µs
°C
A
A
A
A
A
°C
A
A
A
A
A
°C
A
°C
V
min.
5
typ.
1.8
2.2
0.8
0.7
3.3
5.0
5.8
0.1
18.6
1.16
1.02
1700
2.50
max. Unit
2.05
2.4
0.9
0.8
3.8
5.3
6.5
0.3
V
V
V
V
m
m
V
mA
mA
nF
nF
nF
nC
GAR
© by SEMIKRON
Rev. 1 – 20.02.2009
1

1 page




SEMIX302GAR12E4S pdf
SEMiX302GAR12E4s
www.DataSheet4U.com
SEMiX 2s
GAR
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied
is made regarding delivery, performance or suitability.
© by SEMIKRON
Rev. 1 – 20.02.2009
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