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PDF K9K2G08U0A Data sheet ( Hoja de datos )

Número de pieza K9K2G08U0A
Descripción FLASH MEMORY
Fabricantes Samsung semiconductor 
Logotipo Samsung semiconductor Logotipo



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K9K2G08U0A
K9K2G08R0A
FLASHwwMw.EDaMtaSOheeRt4YU.com
K9K2G08X0A
INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,
AND IS SUBJECT TO CHANGE WITHOUT NOTICE.
NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL
INFORMATION IN THIS DOCUMENT IS PROVIDED
ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND.
1. For updates or additional information about Samsung products, contact your nearest Samsung office.
2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar
applications where Product failure could result in loss of life or personal or physical harm, or any military or
defense application, or any governmental procurement to which special terms or provisions may apply.
* Samsung Electronics reserves the right to change products or specification without notice.
1

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K9K2G08U0A pdf
K9K2G08U0A
K9K2G08R0A
PIN CONFIGURATION (FBGA)
K9F1G08X0A-JCB0/JIB0
12 3 4 5 6
N.C N.C
N.C N.C
A N.C
B
C
D
E
F
G
H
N.C N.C
/WP ALE Vss /CE /WE R/B
NC /RE CLE NC NC NC
NC NC NC NC NC NC
NC NC NC NC NC NC
NC NC NC NC NC NC
NC I/O0 NC NC NC Vcc
NC I/O1 NC Vcc I/O5 I/O7
Vss I/O2 I/O3 I/O4 I/O6 Vss
N.C N.C
N.C N.C
N.C N.C
N.C N.C
Top View
FLASHwwMw.EDaMtaSOheeRt4YU.com
5

5 Page





K9K2G08U0A arduino
K9K2G08U0A
K9K2G08R0A
FLASHw Mw EwM. OD Ra Yt a S h e e t 4
VALID BLOCK
Parameter
Valid Block Number
Symbol
NVB
Min
2008
Typ.
-
Max
2048
Unit
Blocks
NOTE :
1. The K9K2G08X0A may include invalid blocks when first shipped. Additional invalid blocks may develop while being used. The number of valid
blocks is presented with both cases of invalid blocks considered. Invalid blocks are defined as blocks that contain one or more bad bits. Do not erase
or program factory-marked bad blocks. Refer to the attached technical notes for appropriate management of invalid blocks.
2. The 1st block, which is placed on 00h block address, is fully guaranteed to be a valid block and does not require Error Correction up to 1K Program/
Earase cycles..
AC TEST CONDITION
(K9K2G08X0A-XCB0 :TA=0 to 70°C, K9K2G08X0A-XIB0:TA=-40 to 85°C
K9K2G08R0A : Vcc=1.65V~1.95V, K9K2G08U0A : Vcc=2.7V~3.6Vunless otherwise noted)
Parameter
K9K2G08R0A
K9K2G08U0A
Input Pulse Levels
0V to Vcc
0V to Vcc
Input Rise and Fall Times
Input and Output Timing Levels
Output Load
5ns
Vcc/2
1 TTL GATE and CL=30pF
5ns
Vcc/2
1 TTL GATE and CL=50pF
CAPACITANCE(TA=25C, VCC=1.8V/3.3V, f=1.0MHz)
Item
Symbol
Test Condition
Min
Max
Unit
Input/Output Capacitance
CI/O
VIL=0V
-
20 pF
Input Capacitance
CIN VIN=0V
-
20 pF
NOTE : Capacitance is periodically sampled and not 100% tested.
MODE SELECTION
CLE
ALE
CE
WE
RE
HL L
H
LHL
H
HL L
H
LHL
H
LLL
H
L L LH
XXXXH
XXXXX
XXXXX
X X(1) X X X
XXHXX
NOTE : 1. X can be VIL or VIH.
2. WP should be biased to CMOS high or CMOS low for standby.
WP
X
X
H
H
H
X
X
H
H
L
0V/VCC(2)
Mode
Read Mode Command Input
Address Input(5clock)
Write Mode Command Input
Address Input(5clock)
Data Input
Data Output
During Read(Busy)
During Program(Busy)
During Erase(Busy)
Write Protect
Stand-by
Program / Erase Characteristics
Parameter
Symbol
Min
Typ
Max
Unit
Program Time
tPROG*1
-
200 700
µs
Dummy Busy Time for Cache Program
tCBSY*2
3 700 µs
Number of Partial Program Cycles
in the Same Page
Main Array
Spare Array
Nop
-
-
-
-
4 cycles
4 cycles
Block Erase Time
tBERS
-
2
3 ms
NOTE : 1.Typical program time is defined as the time within which more than 50% of whole pages are programmed at Vcc of 3.3V and 25°C
2. Max. time of tCBSY depends on timing between internal program completion and data in
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