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Número de pieza | ME4946 | |
Descripción | Dual N-Channel 60-V (D-S) MOSFET | |
Fabricantes | Matsuki | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de ME4946 (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
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Dual N-Channel 60-V (D-S) MOSFET
GENERAL DESCRIPTION
The ME4946 is the Dual N-Channel logic enhancement mode power
field effect transistors are produced using high cell density, DMOS
trench technology. This high density process is especially tailored to
minimize on-state resistance. These devices are particularly suited
for low voltage application such as cellular phone and notebook
computer power management and other battery powered circuits
where high-side switching and low in-line power loss are needed in a
very small outline surface mount package.
ME4946
FEATURES
● RDS(ON)≦41mΩ@VGS=10V
● RDS(ON)≦52mΩ@VGS=4.5V
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
● Power Management
● DC/DC Converter
● LCD TV & Monitor Display inverter
● CCFL inverter
PIN CONFIGURATION
(SOP-8)
Top View
Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
TA=25℃
Current(Tj=150℃)
TA=70℃
Pulsed Drain Current
Continuous Source-Drain Diode Current
Avalanche Current
Single-Pulse Avalanche Energy
L=0.1mH
Maximum Power Dissipation
TA=25℃
TA=70℃
Operating Junction & Storage Temperature Range
Thermal Resistance-Junction to Ambient *
Thermal Resistance-Junction to Case *
*The device mounted on 1in2 FR4 board with 2 oz copper
Symbol
VDSS
VGSS
ID
IDM
IS
IAS
EAS
PD
TJ
RθJA
RθJC
10 secs Steady State
60
±20
6.4 5
5.1 4
30
2
15
12
2.7 1.6
1.7 1
-55 to 150
46 76
43
Unit
V
A
mJ
W
℃
℃/W
July, 2008-Ver4.1
01Datasheet pdf - http://www.DataSheet4U.net/
1 page www.DataSheet.co.kr
Dual N-Channel 60-V (D-S) MOSFET
SOP-8 Package Outline
ME4946
MILLIMETERS (mm)
DIM
MIN MAX
A 1.35 1.75
A1 0.10
0.25
B 0.35 0.49
C 0.18 0.25
D 4.80 5.00
E 3.80 4.00
e 1.27 BSC
H 5.80 6.20
L 0.40 1.25
θ 0°
7°
Note: 1. Refer to JEDEC MS-012AA.
2. Dimension “D” does not include mold flash, protrusions
or gate burrs . Mold flash, protrusions or gate burrs shall not
exceed 0.15 mm per side.
July, 2008-Ver4.1
05Datasheet pdf - http://www.DataSheet4U.net/
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet ME4946.PDF ] |
Número de pieza | Descripción | Fabricantes |
ME4946 | Dual N-Channel 60-V (D-S) MOSFET | Matsuki |
ME4948 | Dual N-Channel 60-V (D-S) MOSFET | Matsuki |
ME4948-G | Dual N-Channel 60-V (D-S) MOSFET | Matsuki |
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