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Número de pieza | STE250NS10 | |
Descripción | ISOTOP STripFET Power MOSFET | |
Fabricantes | STMicroelectronics | |
Logotipo | ||
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STE250NS10
N-channel 100V - 0.0045Ω - 220A - ISOTOP
STripFET™ Power MOSFET
General features
Type
STE250NS10
VDSS
100V
■ Standard threshold drive
■ 100% avalanche tested
RDS(on)
ID
<0.0055Ω 220A
Description
This Power MOSFET is the latest development of
STMicroelectronics unique "Single Feature
Size™" strip-based process. The resulting
transistor shows extremely high packing density
for low on-resistance, rugged avalanche
characteristics and less critical alignment steps
therefore a remarkable manufacturing
reproducibility.
ISOTOP
Internal schematic diagram
Applications
■ Switching application
Order codes
Part number
STE250NS10
Marking
E250NS10
Package
ISOTOP
Packaging
Tube
October 2006
Rev 2
1/12
www.st.com
12
1 page STE250NS10
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Table 7. Source drain diode
Symbol
Parameter
Test conditions
Min Typ. Max Unit
ISD
ISDM (1)
VSD (2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 220A, VGS = 0
ISD = 220A, VDD = 30V
di/dt = 100A/µs,
Tj = 150°C
(see Figure 15)
220 A
880 A
1.5 V
200 ns
1.35 µC
13.5 A
1. Pulse width limited by safe operating area.
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
5/12
5 Page STE250NS10
5 Revision history
Table 8. Revision history
Date
Revision
Changes
21-Jun-2004
1 Complete version
04-Oct-2006
2 New template, no content change
wRwewv.DisaitoanShheiest4toUr.cyom
11/12
11 Page |
Páginas | Total 12 Páginas | |
PDF Descargar | [ Datasheet STE250NS10.PDF ] |
Número de pieza | Descripción | Fabricantes |
STE250NS10 | ISOTOP STripFET Power MOSFET | STMicroelectronics |
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