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PDF FDS6299S Data sheet ( Hoja de datos )

Número de pieza FDS6299S
Descripción 30V N-Channel PowerTrench SyncFET
Fabricantes Fairchild Semiconductor 
Logotipo Fairchild Semiconductor Logotipo



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November 2007
FDS6299S
30V N-Channel PowerTrench® SyncFET
tm
General Description
The FDS6299S is designed to replace a single SO-8
MOSFET and Schottky diode in synchronous DC:DC
power supplies. This 30V MOSFET is designed to
maximize power conversion efficiency, providing a low
RDS(ON) and low gate charge. The FDS6299S includes
a patented combination of a MOSFET monolithically
integrated with a Schottky diode.
Applications
Synchronous Rectifier for DC/DC Converters
Notebook Vcore low side switch
Point of load low side switch
Features
21 A, 30 V.
RDS(ON) = 3.9 m@ VGS = 10 V
RDS(ON) = 5.1 m@ VGS = 4.5 V
Includes SyncFET Schottky body diode
High performance trench technology for extremely low
RDS(ON) and fast switching
High power and current handling capability
100% RG (Gate Resistance) tested
Termination is Lead-free and RoHS Compliant
D
D
D
D
G
SS
SO-8 S
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
PD
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
Power Dissipation for Single Operation
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS6299S
FDS6299S
13’’
5
6
7
8
Ratings
30
±20
21
105
2.5
1.2
1
–55 to +150
50
25
Tape width
12mm
4
3
2
1
Units
V
V
A
W
°C
°C/W
Quantity
2500 units
©2007 Fairchild Semiconductor Corporation
FDS6299S Rev C1 (W)

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Typical Characteristics (continued)
SyncFET Schottky Body Diode
Characteristics
Fairchild’s SyncFET process embeds a Schottky diode in
parallel with PowerTrench MOSFET. This diode exhibits
similar characteristics to a discrete external Schottky
diode in parallel with a MOSFET. Figure 12 shows the
reverse recovery characteristic of the FDS6299S.
Schottky barrier diodes exhibit significant leakage at high
temperature and high reverse voltage. This will increase
the power in the device.
0.1
0.01
TA = 125oC
0.001
TA = 100oC
TIME : 12.5ns/div
Figure 12. FDS6299S SyncFET body
diode reverse recovery characteristic.
0.0001
0.00001
0
TA = 25oC
5 10 15 20 25
VDS, REVERSE VOLTAGE (V)
30
Figure 13. SyncFET body diode reverse
leakage versus drain-source voltage and
temperature.
FDS6299S Rev C1 (W)

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