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PDF IRF6610 Data sheet ( Hoja de datos )
| Número de pieza | IRF6610 | |
| Descripción | HEXFET Power MOSFET Silicon Technology | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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Lead and Bromide Free
Low Profile (<0.7 mm)
Dual Sided Cooling Compatible
Ultra Low Package Inductance
Optimized for High Frequency Switching
Ideal for CPU Core DC-DC Converters
Optimized for both Sync.FET and some Control FET
application
Low Conduction and Switching Losses
Compatible with existing Surface Mount Techniques
PD - 97012
IRF6610www.DataSheet4U.com
DirectFET™ Power MOSFET
Typical values (unless otherwise specified)
VDSS
VGS
RDS(on)
RDS(on)
20V max ±20V max 5.2mΩ@ 10V 8.2mΩ@ 4.5V
Qg tot Qgd Qgs2 Qrr Qoss Vgs(th)
11nC 3.6nC 1.3nC 6.4nC 5.9nC 2.1V
SQ
DirectFET™ ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ SX ST
MQ MX MT MP
Description
The IRF6610 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the
lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows
dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6610 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching
losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors
operating at higher frequencies. The IRF6610 has been optimized for parameters that are critical in synchronous buck operating from 12 volt
buss converters including Rds(on) and gate charge to minimize losses in the control FET socket.
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC = 25°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
IDM Pulsed Drain Current
EAS Single Pulse Avalanche Energy
IAR Avalanche Current
Max.
20
±20
15
12
66
120
13
12
Units
V
A
mJ
A
30
25 ID = 15A
20
15
10 TJ = 125°C
5 TJ = 25°C
0
3 4 5 6 7 8 9 10
VGS, Gate -to -Source Voltage (V)
Notes:
Fig 1. Typical On-Resistance vs. Gate Voltage
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
www.irf.com
6.0
5.0 ID= 12A
4.0
VDS= 16V
VDS= 10V
3.0
2.0
1.0
0.0
0
2 4 6 8 10 12 14 16
QG Total Gate Charge (nC)
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
TC measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 0.18mH, RG = 25Ω, IAS = 12A.
1
05/25/05
1 page  
IRF6610
1000
1000
www.DataSheet4U.com
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100 100
10
TJ = 150°C
TJ = 25°C
1 TJ = -40°C
VGS = 0V
0
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3
VSD, Source-to-Drain Voltage (V)
Fig 10. Typical Source-Drain Diode Forward Voltage
70
60
50
40
30
20
10
0
25 50 75 100 125 150
TC , Case Temperature (°C)
Fig 12. Maximum Drain Current vs. Case Temperature
60
50
40
10 100µsec
1
TA = 25°C
TJ = 150°C
Single Pulse
0.1
0.10 1.00
1msec
10msec
10.00
100.00
VDS, Drain-to-Source Voltage (V)
Fig11. Maximum Safe Operating Area
2.5
2.0
ID = 250µA
1.5
1.0
-75 -50 -25 0 25 50 75 100 125 150
TJ , Temperature ( °C )
Fig 13. Typical Threshold Voltage vs. Junction
Temperature
ID TOP
3.6A
5.3A
BOTTOM 12A
30
20
10
www.irf.com
0
25 50 75 100 125 150
Starting TJ , Junction Temperature (°C)
Fig 14. Maximum Avalanche Energy Vs. Drain Current
5
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet IRF6610.PDF ] | |
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